Digitally tuned, integrated baluns with enhanced linearity for multi-band radio applications

• US 20090085689A1
• Filed: 09/28/2007
• Published: 04/02/2009
• Est. Priority Date: 09/28/2007
• Status: Active Grant

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Rohani, Nader, Tan, Yulin, Xu, Hongtao
• Granted Patent: US 7,688,158 B2
• Time in Patent Office: Days
• US Class Current: 333/25
• CPC Class Codes: H03H 11/34 Networks for connecting several sources or loads working on different frequencies or frequency bands, to a common load or source for use in multiplex transmission systems H04J1/00
• CPC Class Codes: H03H 11/48 simulating reactances
• CPC Class Codes: H03H 7/46 Networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source for use in multiplex transmission systems H04J1/00

Abstract

An integrated balun includes a low pass filter and a high pass filter that are formed on a semiconductor chip using tunable reactive elements. The outputs of the low pass filter and the high pass filter are tied together to form the single ended output of the balun. The inputs of the low pass filter and the high pass filter form the differential inputs of the balun. The low pass filter and the high pass filter each include a number of tunable networks for achieving the tunable reactive elements. Each tunable network includes at least one switching transistor and at least one fixed value reactive elements. In at least one embodiment, dynamic biasing circuitry may be provided to improve the linearity and reduce the insertion loss of the balun.

Claims

1. A multi-band balun comprising:

a low pass filter having a number of tuning networks to achieve tunable reactive elements within the low pass filter, each tuning network in said low pass filter including at least one switching transistor and at least one fixed reactive element, wherein an input of said low pass filter forms a first differential port of said balun; and

a high pass filter having a number of tuning networks to achieve tunable reactive elements within the high pass filter, each tuning network in said high pass filter including at least one switching transistor and at least one fixed reactive element, wherein an input of said high pass filter forms a second differential port of said balun and an output of said high pass filter is coupled to an output of said low pass filter to form a single-ended port of said balun;

wherein said low pass filter and said high pass filter are integrated on a semiconductor chip.

2. The multi-band balun of claim 1, wherein:

a gate terminal of a first switching transistor within a first tuning network of said low pass filter is coupled to receive a control voltage signal V_c to turn said first switching transistor off and on during balun operation to switch between operational bands; and

said multi-band balun further includes an inverter to invert said control voltage signal V_c and to deliver said inverted version of said signal to a source terminal of said first switching transistor to improve linearity in said multi-band balun.

3. The multi-band balun of claim 2, wherein:

a gate terminal of a second switching transistor within a second tuning network of said low pass filter is coupled to receive said inverted version of said control voltage V_c; and

a source terminal of said second switching transistor within said second tuning network of said low pass filter is coupled to receive said control voltage V_C to improve linear operation of said balun.

4. The multi-band balun of claim 1, wherein:

said low pass filter is arranged as a pi network having two shunt capacitive tuning networks coupled by a series inductive tuning network; and

said high pass filter is arranged as a T network having two series capacitive tuning networks with a shunt inductive tuning network there between.

5. The multi-band balun of claim 1, wherein:

a gate terminal of a first switching transistor within a first tuning network of said low pass filter is coupled to receive a control voltage signal V_c to turn said first switching transistor off and on during balun operation to switch between operational bands; and

a source terminal of said first switching transistor is coupled to receive a control voltage V_b that is approximately one-half of the supply voltage V_DD of the balun to improve linear operation of the balun.

6. The multi-band balun of claim 5, further comprising:

an inverter to generate an inverted version of said control voltage V_C;

wherein a gate terminal of a second switching transistor within a second tuning network of said low pass filter is coupled to receive said inverted version of said control voltage V_C; and

a source terminal of said second switching transistor within said second tuning network of said low pass filter is coupled to receive said control voltage V_b to improve linear operation of said balun.

7. The multi-band balun of claim 1, wherein:

said semiconductor chip is a front end module chip.

8. The multi-band balun of claim 1, wherein:

said low pass filter includes a first capacitive tuning network to achieve a tunable capacitance therein, said first capacitive tuning network including a first branch having a first switching transistor in series with at least one DC blocking capacitor and a second branch, in parallel with said first branch, having a fixed value capacitor, wherein a parasitic off-state capacitance of said first switching transistor acts as a reactive tuning element of said low pass filter when said first switching transistor is in an off state.

9. The multi-band balun of claim 8, wherein:

said low pass filter includes a second capacitive tuning network to achieve a tunable capacitance therein, said second capacitive tuning network including a third branch having a second switching transistor in series with at least one DC blocking capacitor and a fourth branch, in parallel with said third branch, having a fixed value capacitor, wherein a parasitic off-state capacitance of said second switching transistor acts as a reactive tuning element of said low pass filter when said second switching transistor is in said off state;

wherein said first capacitive tuning network and said second capacitive tuning network are each connected in shunt with a series inductive tuning network coupled there between.

10. A system comprising:

a tunable multi-band balun that can switch between at least first and second operational frequency bands in response to a control signal; and

a broadband transmit/receive (TX/RX) switch coupled to a first differential port of said tunable multi-band balun.

11. The system of claim 10, further comprising:

first and second radio frequency transmitters and first and second radio frequency receivers coupled to differential ports of said broadband TX/RX switch, said first radio frequency transmitter and said first radio frequency receiver operable in a first frequency band and said second radio frequency transmitter and said second radio frequency receiver operative in a second frequency band that is different from said first frequency band, wherein said broadband TX/RX switch is configured to couple one of said first radio frequency transmitter, said second radio frequency transmitter, said first radio frequency receiver, and said second radio frequency receiver through to said first differential port based on control signals.

12. The system of claim 10, wherein said tunable multi-band balun comprises:

a low pass filter having a number of tuning networks to achieve tunable reactive elements within the low pass filter, each tuning network in said low pass filter including at least one switching transistor and at least one fixed reactive element, wherein an input of said low pass filter forms a first differential port of said multi-band balun; and

a high pass filter having a number of tuning networks to achieve tunable reactive elements within the high pass filter, each tuning network in said high pass filter including at least one switching transistor and at least one fixed reactive element, wherein an input of said high pass filter forms a second differential port of said multi-band balun and an output of said high pass filter is connected to an output of said low pass filter to form a single-ended port of said multi-band balun.

13. The system of claim 12, wherein:

a gate terminal of a first switching transistor within a first tuning network of said low pass filter is coupled to receive a control voltage signal V_c to turn said first switching transistor off and on during balun operation to switch between operational frequency bands; and

said multi-band balun further includes an inverter to invert said control voltage signal V_c and to deliver said inverted signal to a source terminal of said first switching transistor to improve linearity in said multi-band balun.

14. The system of claim 13, wherein:

a gate terminal of a second switching transistor within a second tuning network of said low pass filter is coupled to receive said inverted version of said control voltage V_C; and

a source terminal of said second switching transistor within said second tuning network of said low pass filter is coupled to receive said control voltage V_C to improve linear operation of said balun.

15. The system of claim 12, wherein:

said low pass filter is arranged as a pi network having two shunt capacitive tuning networks coupled by a series inductive tuning network; and

said high pass filter is arranged as a T network having two series capacitive tuning networks with a shunt inductive tuning network connected there between.

16. The system of claim 12, wherein:

a gate terminal of a first switching transistor within a first tuning network of said low pass filter is coupled to receive a control voltage signal V_c to turn said first switching transistor off and on to tune said multi-band balun between multiple different frequency bands; and

a source terminal of said first switching transistor is coupled to receive a control voltage V_b that is approximately one-half of the supply voltage V_DD of the balun to improve linear operation of the balun.

17. The system of claim 16, further comprising:

an inverter to generate an inverted version of said control voltage V_C;

wherein a gate terminal of a second switching transistor within a second tuning network of said low pass filter is coupled to receive said inverted version of said control voltage V_C; and

a source terminal of said second switching transistor within said second tuning network of said low pass filter is coupled to receive said control voltage V_b to improve linear operation of said balun.

18. The system of claim 12, wherein:

said low pass filter includes a first capacitive tuning network to achieve a tunable capacitance therein, said first capacitive tuning network including a first branch having a first switching transistor in series with at least one DC blocking capacitor and a second branch, in parallel with said first branch, having a fixed value capacitor, wherein a parasitic off-state capacitance of said first switching transistor acts as a reactive tuning element of said low pass filter when said first switching transistor is in an off state.

19. The system of claim 18, wherein:

said low pass filter includes a second capacitive tuning network to achieve a tunable capacitance therein, said second capacitive tuning network including a third branch having a second switching transistor in series with at least one DC blocking capacitor and a fourth branch, in parallel with said third branch, having a fixed value capacitor, wherein a parasitic off-state capacitance of said second switching transistor acts as a reactive tuning element of said low pass filter when said second switching transistor is in said off state;

wherein said first capacitive tuning network and said second capacitive tuning network are each connected in shunt with a series inductive tuning network coupled there between.