IMAGING APPARATUS AND METHOD OF DRIVING SOLID-STATE IMAGING DEVICE
First Claim
1. An imaging apparatus comprising:
- a solid-state imaging device; and
a driving unit that drives the solid-state imaging device, whereinthe solid-state imaging device includes;
a plurality of photoelectric conversion elements that are two-dimensionally arranged on a semiconductor substrate in a specific direction and a direction that is orthogonal to the specific direction,a plurality of charge transfer paths that are provided so as to correspond to photoelectric conversion element columns, each including the photoelectric conversion elements arranged in the specific direction, the charge transfer paths that transfer in the specific direction charges generated in the plurality of photoelectric conversion elements, andtransfer electrodes that are provided above the charge transfer paths and are arranged along the specific direction,the transfer electrodes include first transfer electrodes that are provided to correspond to the respective photoelectric conversion elements constituting the photoelectric conversion element column, the first transfer electrodes that control reading out of the charges from the photoelectric conversion elements to the charge transfer paths and the transferring of the charges in the charge transfer path,the plurality of photoelectric conversion elements include first photoelectric conversion elements and second photoelectric conversion elements,an exposure time of the second photoelectric conversion elements is shorter than that of the first photoelectric conversion elements, andduring the exposure period of the first photoelectric conversion elements, the driving unit performs a driving operation includingapplying, to the first transfer electrodes corresponding to the second photoelectric conversion elements, a readout pulse for reading out the charges stored in the photoelectric conversion elements to the charge transfer paths, andapplying, to at least a part of the transfer electrodes other than the transfer electrode to which the readout pulse is applied, a suppression pulse that has a polarity opposite to that of the readout pulse and prevents potentials of charge storage regions of the photoelectric conversion elements from changing due to the readout pulse.
1 Assignment
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Accused Products
Abstract
A solid-state imaging device 5 includes photoelectric conversion elements 51R, 51G, and 51B and photoelectric conversion elements 51r, 51g, and 51b there are controlled to have an exposure time shorter than that of the photoelectric conversion elements 51R, 51G, and 51B. During the exposure period of the photoelectric conversion elements 51R, 51G, and 51B, an imaging device driving section 10 applies a readout pulse to transfer electrodes V2 and V6 and applies a suppression pulse having a polarity opposite to that of the readout pulse to transfer electrodes V4 and V8, to thereby read out the charges stored in the photoelectric conversion elements 51r, 51g, and 51b to a vertical charge transfer path 54 and to control start of exposure of the photoelectric conversion elements 51r, 51g, and 51b.
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Citations
14 Claims
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1. An imaging apparatus comprising:
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a solid-state imaging device; and a driving unit that drives the solid-state imaging device, wherein the solid-state imaging device includes; a plurality of photoelectric conversion elements that are two-dimensionally arranged on a semiconductor substrate in a specific direction and a direction that is orthogonal to the specific direction, a plurality of charge transfer paths that are provided so as to correspond to photoelectric conversion element columns, each including the photoelectric conversion elements arranged in the specific direction, the charge transfer paths that transfer in the specific direction charges generated in the plurality of photoelectric conversion elements, and transfer electrodes that are provided above the charge transfer paths and are arranged along the specific direction, the transfer electrodes include first transfer electrodes that are provided to correspond to the respective photoelectric conversion elements constituting the photoelectric conversion element column, the first transfer electrodes that control reading out of the charges from the photoelectric conversion elements to the charge transfer paths and the transferring of the charges in the charge transfer path, the plurality of photoelectric conversion elements include first photoelectric conversion elements and second photoelectric conversion elements, an exposure time of the second photoelectric conversion elements is shorter than that of the first photoelectric conversion elements, and during the exposure period of the first photoelectric conversion elements, the driving unit performs a driving operation including applying, to the first transfer electrodes corresponding to the second photoelectric conversion elements, a readout pulse for reading out the charges stored in the photoelectric conversion elements to the charge transfer paths, and applying, to at least a part of the transfer electrodes other than the transfer electrode to which the readout pulse is applied, a suppression pulse that has a polarity opposite to that of the readout pulse and prevents potentials of charge storage regions of the photoelectric conversion elements from changing due to the readout pulse. - View Dependent Claims (2, 3, 4, 5)
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6. An imaging apparatus comprising:
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a solid-state imaging device; and a driving unit that drives the solid-state imaging device, wherein the solid-state imaging device includes; a plurality of photoelectric conversion elements that are two-dimensionally arranged on a semiconductor substrate in a specific direction and a direction that is orthogonal to the specific direction, a plurality of charge transfer paths that are provided so as to correspond to photoelectric conversion element columns, each including the photoelectric conversion elements arranged in the specific direction, the charge transfer paths that transfer in the specific direction charges generated in the plurality of photoelectric conversion elements, and transfer electrodes that are provided above the charge transfer paths and are arranged along the specific direction, the transfer electrodes include first transfer electrodes that are provided to correspond to the respective photoelectric conversion elements constituting the photoelectric conversion element column, the first transfer electrodes that control reading out of the charges from the photoelectric conversion elements to the charge transfer paths and the transferring of the charges in the charge transfer path, the plurality of photoelectric conversion elements include first photoelectric conversion elements and second photoelectric conversion elements, an exposure time of the second photoelectric conversion elements is shorter than that of the first photoelectric conversion elements, when the exposure time of the second photoelectric conversion elements is longer than a threshold value, during the exposure period of the first photoelectric conversion elements, the driving unit classifies the first transfer electrodes corresponding to the second photoelectric conversion elements into a plurality of groups and applies a first readout pulse for reading out the charges stored in the photoelectric conversion elements to the charge transfer paths to the plurality of groups at different timings, and when the exposure time of the second photoelectric conversion elements is equal to or shorter than the threshold value, during the exposure period of the first photoelectric conversion elements, the driving unit applies a second readout pulse having a level that is higher than that of the first readout pulse to the first transfer electrodes corresponding to the second photoelectric conversion elements. - View Dependent Claims (7)
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8. A method of driving a solid-state imaging device, wherein
the solid-state imaging device includes a plurality of photoelectric conversion elements that are two-dimensionally arranged on a semiconductor substrate in a specific direction and a direction that is orthogonal to the specific direction, a plurality of charge transfer paths that are provided so as to correspond to photoelectric conversion element columns, each including the photoelectric conversion elements arranged in the specific direction, the charge transfer paths that transfer in the specific direction charges generated in the plurality of photoelectric conversion elements, and transfer electrodes that are provided above the charge transfer paths and are arranged along the specific direction, the transfer electrodes include first transfer electrodes that are provided to correspond to the respective photoelectric conversion elements constituting the photoelectric conversion element column, the first transfer electrodes that control reading out of the charges from the photoelectric conversion elements to the charge transfer paths and the transferring of the charges in the charge transfer path, the plurality of photoelectric conversion elements include first photoelectric conversion elements and second photoelectric conversion elements, and an exposure time of the second photoelectric conversion elements is shorter than that of the first photoelectric conversion elements, the method comprising during the exposure period of the first photoelectric conversion elements, applying, to the first transfer electrodes corresponding to the second photoelectric conversion elements, a readout pulse for reading out the charges stored in the photoelectric conversion elements to the charge transfer paths, and applying, to at least a part of the transfer electrodes other than the transfer electrode to which the readout pulse is applied, a suppression pulse that has a polarity opposite to that of the readout pulse and prevents potentials of charge storage regions of the photoelectric conversion elements from changing due to the readout pulse.
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13. A method of driving a solid-state imaging device, wherein
the solid-state imaging device includes: -
a plurality of photoelectric conversion elements that are two-dimensionally arranged on a semiconductor substrate in a specific direction and a direction that is orthogonal to the specific direction, a plurality of charge transfer paths that are provided so as to correspond to photoelectric conversion element columns, each including the photoelectric conversion elements arranged in the specific direction, the charge transfer paths that transfer in the specific direction charges generated in the plurality of photoelectric conversion elements, and transfer electrodes that are provided above the charge transfer paths and are arranged along the specific direction, the transfer electrodes include first transfer electrodes that are provided to correspond to the respective photoelectric conversion elements constituting the photoelectric conversion element column, the first transfer electrodes that control reading out of the charges from the photoelectric conversion elements to the charge transfer paths and the transferring of the charges in the charge transfer path, the plurality of photoelectric conversion elements include first photoelectric conversion elements and second photoelectric conversion elements, an exposure time of the second photoelectric conversion elements is shorter than that of the first photoelectric conversion elements, the method comprising; comparing the exposure time of the second photoelectric conversion elements with a threshold value; when the exposure time of the second photoelectric conversion elements is longer than the threshold value, during the exposure period of the first photoelectric conversion elements, classifying the first transfer electrodes corresponding to the second photoelectric conversion elements into a plurality of groups, and applying a first readout pulse for reading out the charges stored in the photoelectric conversion elements to the charge transfer paths to the plurality of groups at different timings; and when the exposure time of the second photoelectric conversion elements is equal to or shorter than the threshold value, during the exposure period of the first photoelectric conversion elements, applying a second readout pulse having a level that is higher than that of the first readout pulse to the first transfer electrodes corresponding to the second photoelectric conversion elements. - View Dependent Claims (14)
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Specification