METHOD OF MANUFACTURING LATERALLY GRADED POROUS SILICON OPTICAL FILTER THROUGH DIFFUSION-LIMITED ETCHING AND FILTER STRUCTURE MANUFACTURED THEREBY
First Claim
Patent Images
1. A method of manufacturing a laterally graded porous silicon optical filter through diffusion-limited etching, comprising:
- forming an etch mask; and
conducting anodic etching in a porous silicon etch bath.
1 Assignment
0 Petitions
Accused Products
Abstract
Disclosed herein is a method of manufacturing a laterally graded porous silicon optical filter through diffusion-limited etching. The change in resonance frequency of the porous silicon layer in a taper axis direction is adjusted using the diffusion of reactive ions in an etchant under conditions of use of a related etch mask pattern. It is possible to manufacture an optical band-pass filter having a resonance frequency that linearly changes using a tapered etch window opening.
34 Citations
18 Claims
-
1. A method of manufacturing a laterally graded porous silicon optical filter through diffusion-limited etching, comprising:
-
forming an etch mask; and conducting anodic etching in a porous silicon etch bath. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. A laterally graded porous silicon optical filter structure manufactured using a method of manufacturing a laterally graded porous silicon optical filter through diffusion-limited etching, the method comprising:
-
forming an etch mask; and conducting anodic etching in a porous silicon etch bath. - View Dependent Claims (8, 9, 10, 11, 12)
-
-
13. A filter manufactured using the method of manufacturing a laterally graded porous silicon optical filter through diffusion-limited etching, the method comprising forming an etch mask, and conducting anodic etching in a porous silicon etch bath, the filter comprising:
distributed Bragg reflectors comprising eight layers having a thickness of λ
/4 and a central spacer layer disposed therebetween and having a thickness of λ
/2, and having a wavelength tuning range of 10˜
100 nm, a transmission bandwidth of 1˜
10 nm, and a center wavelength ranging from 400 nm to 2000 nm.- View Dependent Claims (14, 15, 16, 17, 18)
Specification