STRUCTURE AND METHOD FOR DETERMINING AN OVERLAY ACCURACY

• US 20090087756A1
• Filed: 04/11/2008
• Published: 04/02/2009
• Est. Priority Date: 09/29/2007
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Schulz, Bernd
• Granted Patent: US 7,666,559 B2
• Time in Patent Office: Days
• US Class Current: 430/5
• CPC Class Codes: G03F 7/70633 Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
• CPC Class Codes: Y10S 438/975 Substrate or mask aligning feature

Abstract

An enhanced technique for determination of an alignment accuracy involves an overlay target assembly which comprises at least two targets, each target having a first sub-structure of a first layer and a second sub-structure of a second layer, wherein, when the first layer and the second layer are correctly aligned, the first sub-structure and the second sub-structure of at least one of the targets are offset with respect to each other by a programmed offset and the overlay target assembly is invariant to at least one geometric transformation. If the offset vectors which describe the offset between the first sub-structure and the second sub-structure all have the same norm, the overlay error may be determined without calibration. Redundancy may be increased by providing each target with two or more programmed offsets between elements of the first sub-structure and elements of the second sub-structure.

Claims

1. An overlay target assembly adapted for use in determining an alignment accuracy of a first layer and a second layer of a multi-layered device, said assembly comprising:

at least two targets, each target having a first sub-structure of said first layer and a second sub-structure of said second layer;

wherein, when said first layer and said second layer are correctly aligned;

said first sub-structure and said second sub-structure of at least one of said targets are offset with respect to each other by a programmed offset; and

said overlay target assembly is invariant to at least one transformation selected from rotation about a predetermined angle and reflection.

2. The overlay target assembly of claim 1, wherein when, said first layer and said second layer are correctly aligned, said first sub-structure and said second sub-structure of each of said at least two targets are offset with respect to each other by a respective programmed offset.

3. The overlay target assembly of claim 1, comprising at least four targets arranged in an n×

n array.

4. The overlay target assembly of claim 3, wherein said overlay target assembly is invariant to reflection about a mirror axis which extends in parallel to a row or a column of said n×

n array.

5. The overlay target assembly of claim 4, wherein:

said targets are arranged in quadrants of a Cartesian coordinate system spanned by an x-axis and a y-axis, wherein said x-axis corresponds to said mirror axis which extends in parallel to said row of said n×

n array and said y-axis corresponds to said mirror axis which extends in parallel to said column of said n×

n array;

said programmed offset of each target is defined by a respective offset vector; and

each offset vector is on a straight line running through an origin of said Cartesian coordinate system.

6. The overlay target assembly of claim 5, wherein offset vectors of diametrical quadrants are point-symmetric with regard to the origin of the Cartesian coordinate systems.

7. The overlay target assembly of claim 5, wherein said offset vectors are of said same length.

8. The overlay target assembly of claim 1, wherein said overlay target assembly is invariant to a rotation about 90 degrees.

9. The overlay target assembly of claim 1, wherein said overlay target assembly is invariant to a rotation about 180 degrees.

10. The overlay target assembly of claim 1, wherein each target has a generally rectangular form.

11. The overlay target assembly of claim 1, wherein each target has a dimension smaller than 4.5 μ

m.

12. The overlay target assembly of claim 1, wherein said at least two targets are spaced equidistantly by a predetermined distance.

13. The overlay target assembly of claim 1, wherein at least one of said targets is a target having a single symmetry axis.

14. The overlay target assembly of claim 1, wherein of each target at least one of the first sub-structure and the second sub-structure has two or more symmetry axis.

15. The overlay target assembly of claim 1, wherein two neighboring targets share a common target element.

16. The overlay target assembly of claim 1, wherein said overlay target assembly is located on a semiconductor device.

17. The overlay target assembly of claim 16, wherein said overlay target assembly is located in a chip area comprising active elements of said semiconductor device.

18. An overlay target structure adapted for use in determining an alignment accuracy of a first layer and a second layer of a multi-layered device, said structure comprising:

a first sub-structure of said first layer; and

a second sub-structure of said second layer, wherein;

when said first layer and said second layer are correctly aligned, said first sub-structure and said second sub-structure are offset with respect to each other; and

said overlay target structure is invariant to at least one transformation selected from rotation about a predetermined angle and reflection.

19. A method, comprising:

forming an overlay target assembly comprising;

at least two targets, each target having a first sub-structure of a first layer and a second sub-structure of a second layer;

wherein, when said first layer and said second layer are correctly aligned;

said first sub-structure and said second sub-structure of at least one of said targets are offset with respect to each other by a programmed offset; and

said overlay target assembly is invariant to at least one transformation selected from rotation about a predetermined angle and reflection; and

determining an alignment accuracy between said first layer and said second layer from a spatial relationship of said first sub-structure and said second sub-structure of said at least two targets.

20. The method of claim 19, wherein said alignment accuracy between said first layer and said second layer is determined on the basis of an image asymmetry of each individual target.