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DUAL DAMASCENE WITH AMORPHOUS CARBON FOR 3D DEEP VIA/TRENCH APPLICATION

  • US 20090087979A1
  • Filed: 09/28/2007
  • Published: 04/02/2009
  • Est. Priority Date: 09/28/2007
  • Status: Active Grant
First Claim
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1. A method for fabricating a 3-D monolithic memory device, comprising:

  • first patterning of a first insulating layer to form a trench therein using a first amorphous carbon hard mask;

    applying amorphous carbon to fill in at least a portion of the trench and to provide an amorphous carbon layer above the first insulating layer;

    second patterning of the first insulating layer, using a second amorphous carbon hard mask formed from the amorphous carbon layer, to form a via in the first insulating layer which is aligned with the trench and extends below the trench; and

    providing a conductive material in the trench and via.

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