METHOD OF FORMING FINE PATTERNS AND MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SAME

• US 20090087994A1
• Filed: 09/26/2008
• Published: 04/02/2009
• Est. Priority Date: 09/28/2007
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: LEE, Jong Ho, Park, Moo Youn, Hwang, Soo Ryong, Jung, Il Hyung, Kim, Jin Ha, Lee, Gwan Su
• Granted Patent: US 8,080,480 B2
• Time in Patent Office: Days
• US Class Current: 438/704
• CPC Class Codes: H01L 21/30617 Anisotropic liquid etching
• CPC Class Codes: H01L 21/30621 Vapour phase etching
• CPC Class Codes: H01L 21/3083 characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body

Abstract

A method of forming a fine pattern begins with providing a c-plane hexagonal semiconductor crystal. A mask having a predetermined pattern is formed on the semiconductor crystal. The semiconductor crystal is dry-etched by using the mask to form a first fine pattern on the semiconductor crystal. The semiconductor crystal including the first fine pattern is wet-etched to expand the first fine pattern in a horizontal direction to form a second fine pattern. The second fine pattern obtained in the wet-etching the semiconductor crystal has a bottom surface and a sidewall that have unique crystal planes, respectively. The present fine-pattern forming process can be advantageously applied to a semiconductor light emitting device, particularly, to a phonic crystal structure required to have fine patterns or a structure using a surface plasmon resonance principle.

Claims

1. A method of forming a fine pattern, the method comprising:

providing a c-plane hexagonal semiconductor crystal;

forming a mask having a predetermined pattern on the semiconductor crystal;

dry-etching the semiconductor crystal by using the mask to form a first fine pattern on the semiconductor crystal; and

wet-etching the semiconductor crystal including the first fine pattern to expand the first fine pattern in a horizontal direction to form a second fine pattern,

wherein the second fine pattern obtained in the wet-etching the semiconductor crystal has a bottom surface and a sidewall that have unique crystal planes, respectively.

2. The method of claim 1, wherein the semiconductor crystal substrate is formed of a p-type nitride semiconductor.

3. The method of claim 1, wherein a bottom surface obtained in the forming a first fine pattern has the same c-plane that a bottom surface obtained in the forming a second fine pattern has.

4. The method of claim 3, wherein the pattern of the mask comprises a plurality of line patterns formed in a <

11-20>

orientation of the semiconductor crystal and arranged along a <

1-100>

orientation, and

the sidewall of the second fine pattern has an m-plane.

5. The method of claim 3, wherein the pattern of the mask comprises a plurality of line patterns formed in a <

1-100>

orientation of the semiconductor crystal and arranged in a <

11-20>

orientation.

6. The method of claim 3, wherein the pattern of the mask comprises a plurality of fine holes, and

the second fine pattern comprises a plurality of hexagonal fine holes.

7. The method of claim 6, wherein the forming a second fine pattern comprises performing wet-etching such that the sidewall of the second fine pattern has an m-plane component and an s-plane component.

8. The method of claim 6, wherein the forming a second fine pattern comprises performing wet-etching such that the sidewall of the second fine pattern includes an r-plane component.

9. The method of claim 3, wherein the second fine pattern has a pillar structure.

10. The method of claim 1, wherein the forming a second fine pattern is performed after the mask is removed.

11. The method of claim 1, wherein the forming a second fine pattern is performed before the mask is removed.

12. A method of manufacturing a semiconductor light emitting device, the method comprising:

providing a multilayered semiconductor structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first and second conductivity type semiconductor layers;

forming a mask having a predetermined pattern on the second conductivity type semiconductor layer of the multilayered semiconductor structure;

dry-etching the second conductivity type semiconductor layer by using the mask to form a first fine pattern on the second conductivity type semiconductor layer;

wet-etching the second conductivity type semiconductor layer including the first fine pattern to expand the first fine pattern in a horizontal direction to form a second fine pattern; and

forming a first electrode and a second electrode in a state where the mask has been removed, the first and second electrode respectively being connected with the first and second conductivity type semiconductor layers,

wherein the second conductivity type semiconductor layer is a c-plane hexagonal semiconductor crystal, and the second fine pattern obtained from the wet-etching the second conductivity type semiconductor layer has a bottom surface and a sidewall that have unique crystal planes, respectively.

13. The method of claim 12, wherein the forming a second electrode comprises forming a transparent electrode layer on the second conductivity type semiconductor layer including the second fine pattern.

14. The method of claim 12, wherein the forming a second electrode comprises forming a highly reflective metal layer on the second conductivity type semiconductor layer including the second fine pattern.

15. The method of claim 13, wherein the second conductivity type semiconductor layer has a thickness allowing light emitted at the active layer to excite a surface plasmon at an interface between the second conductivity type semiconductor layer and the highly reflectively metal layer.

16. The method of claim 14, wherein the second conductivity type semiconductor layer has a thickness of about 50 nm or less.

17. The method of claim 12, wherein the multilayered semiconductor structure is formed of a nitride semiconductor, and

the first conductivity type semiconductor layer and the second conductivity type semiconductor layer are an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, respectively.

18. The method of claim 17, wherein a bottom surface obtained in the forming a first fine pattern has the same c-plane that the bottom surface obtained in the forming a second fine pattern has.

19. The method of claim 18, wherein the pattern of the mask comprises a plurality of line patterns formed in a <

11-20>

orientation of the semiconductor crystal and arranged along a <

1-100>

orientation, and

the sidewall of the second fine pattern has an m-plane.

20. The method of claim 18, wherein the pattern of the mask comprises a plurality of line patterns formed in a <

1-100>

orientation of the semiconductor crystal and arranged along a <

11-20>

orientation.

21. The method of claim 18, wherein the pattern of the mask comprises a plurality of fine holes, and

the second fine pattern comprises a plurality of fine hexagonal holes.

22. The method of claim 21, wherein the forming a second fine pattern comprises performing wet-etching such that the sidewall of the second fine pattern has an m-plane component and an s-plane component.

23. The method of claim 21, wherein the forming a second fine pattern comprises performing wet-etching such that the sidewall of the second fine pattern has an r-plane component.

24. The method of claim 13, wherein the second fine pattern has a pillar structure.

25. The method of claim 13, wherein the mask is removed between the forming a first fine pattern and the forming a second fine pattern.

26. The method of claim 13, wherein the mask is removed after the forming a second fine pattern.