NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE
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Accused Products
Abstract
A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.
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Citations
30 Claims
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1-20. -20. (canceled)
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21. A nitride semiconductor light emitting diode (LED) comprising:
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a p-electrode; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an electron emitting layer formed on the active layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an n-type nitride semiconductor layer formed on the electron emitting layer; a substrate formed on the n-type nitride semiconductor layer; and an n-electrode formed on the substrate. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29)
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30-32. -32. (canceled)
Specification