SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- on a substrate, a first electrode for injecting electrons;
a second electrode for injecting holes;
a light emitting unit electrically connected to the first and second electrodes and emitting light by being injected with the electrons and holes by applying voltages to both electrodes; and
a mirror having a function of reflecting the light emitted from the light emitting unit,wherein the light emitting unit includes a thin film installed on the substrate and a first insulating film having a first permittivity, which is installed on the thin film,the mirror is formed by periodically and alternately disposing a plurality of second insulating films having a second permittivity different from the first permittivity and a plurality of third insulating films having a third permittivity different from the second permittivity on the first insulating film to be opposed to each other by a predetermined gap, andthe film thickness of the thin film is thinner than those of the first and second electrodes.
1 Assignment
0 Petitions
Accused Products
Abstract
There are a silicon laser device having a IV-group semiconductor such as silicon or germanium equivalent to the silicon as a basic constituent element on a substrate made of the silicon, and the like by a method capable of easily forming the silicon laser device by using a general silicon process, and a manufacturing method thereof. The silicon laser device is an ultrathin silicon laser that includes a first electrode unit injecting electrons, a second electrode unit injecting holes, a light emitting unit electrically connected to the first electrode unit and the second electrode unit, wherein the light emitting unit is made of single-crystal silicon and has a first surface (top surface) and a second surface (bottom surface) opposed to the first surface, a waveguide made of a first dielectric, which is disposed in the vicinity of the light emitting unit, by setting surface directions of the first and second surfaces as a surface (100) and thinning a thickness of the light emitting unit in a direction perpendicular to the first and second surfaces, and a mirror formed by alternately adjoining the first dielectric and a second dielectric.
16 Citations
19 Claims
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1. A semiconductor device comprising:
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on a substrate, a first electrode for injecting electrons; a second electrode for injecting holes; a light emitting unit electrically connected to the first and second electrodes and emitting light by being injected with the electrons and holes by applying voltages to both electrodes; and a mirror having a function of reflecting the light emitted from the light emitting unit, wherein the light emitting unit includes a thin film installed on the substrate and a first insulating film having a first permittivity, which is installed on the thin film, the mirror is formed by periodically and alternately disposing a plurality of second insulating films having a second permittivity different from the first permittivity and a plurality of third insulating films having a third permittivity different from the second permittivity on the first insulating film to be opposed to each other by a predetermined gap, and the film thickness of the thin film is thinner than those of the first and second electrodes. - View Dependent Claims (2, 7, 8, 9, 10, 11, 12, 13, 14, 15, 18, 19)
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3. A semiconductor device comprising:
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on a substrate, a first electrode for injecting electrons; a second electrode for injecting holes; a light emitting unit electrically connected to the first and second electrodes, and emitting light by being injected with the electrons and holes by applying voltage to both electrodes; a waveguide transmitting the light emitted from the light emitting unit; and a mirror having a function of reflecting the light emitted from the light emitting unit, wherein the light emitting unit includes a thin film installed on the substrate and a first insulating film having a first permittivity, which is installed on the thin film, the waveguide is disposed on the thin film via the first insulating film and the mirror is installed adjacent to a termination of the waveguide, the mirror is formed by periodically and alternately disposing a plurality of second insulating films having a second permittivity different from the first permittivity and a plurality of third insulating films having a third permittivity different from the second permittivity on the first insulating film to be opposed to each other with a predetermined gap, and the film thickness of the thin film is thinner than those of the first and second electrodes. - View Dependent Claims (4, 16)
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5. A semiconductor device comprising:
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on a substrate, a first electrode for injecting electrons; a second electrode for injecting holes; a light emitting unit electrically connected to the first and second electrodes and emitting light by being injected with the electrons and holes by applying voltages to both electrodes; and a mirror having a function of reflecting the light emitted from the light emitting unit, wherein the light emitting unit includes a thin film installed on the substrate and a first insulating film having a first permittivity, which is installed on the thin film, the mirror has a laminated film in which a plurality of second insulating films having a second permittivity different from the first permittivity and a plurality of third insulating films having a third permittivity different from the second permittivity are alternately laminated on the first insulating film, and the film thickness of the thin film is thinner than those of the first and second electrodes. - View Dependent Claims (6, 17)
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Specification