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MOSFET ACTIVE AREA AND EDGE TERMINATION AREA CHARGE BALANCE

  • US 20090090967A1
  • Filed: 09/03/2008
  • Published: 04/09/2009
  • Est. Priority Date: 10/05/2007
  • Status: Active Grant
First Claim
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1. A method for fabricating a semiconductor device having an active area and an edge termination area, said method comprising:

  • forming a first plurality of implants at the bottom of trenches located in said active area and at the bottom of trenches located in said edge termination area; and

    forming a second plurality of implants at the bottom of said trenches located in said active area while leaving alone said first plurality of implants located in said edge termination area, wherein said second plurality of implants formed at said bottom of said trenches located in said active area causes said implants formed at the bottom of said trenches located in said active area to reach a predetermined concentration.

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