MOSFET ACTIVE AREA AND EDGE TERMINATION AREA CHARGE BALANCE
First Claim
1. A method for fabricating a semiconductor device having an active area and an edge termination area, said method comprising:
- forming a first plurality of implants at the bottom of trenches located in said active area and at the bottom of trenches located in said edge termination area; and
forming a second plurality of implants at the bottom of said trenches located in said active area while leaving alone said first plurality of implants located in said edge termination area, wherein said second plurality of implants formed at said bottom of said trenches located in said active area causes said implants formed at the bottom of said trenches located in said active area to reach a predetermined concentration.
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Accused Products
Abstract
A method for fabricating a MOSFET having an active area and an edge termination area is disclosed. The method includes forming a first plurality of implants at the bottom of trenches located in the active area and in the edge termination area. A second plurality of implants is formed at the bottom of the trenches located in the active area. The second plurality of implants formed at the bottom of the trenches located in the active area causes the implants formed at the bottom of the trenches located in the active area to reach a predetermined concentration. In so doing, the breakdown voltage of both the active and edge termination areas can be made similar and thereby optimized while maintaining advantageous RDson.
148 Citations
28 Claims
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1. A method for fabricating a semiconductor device having an active area and an edge termination area, said method comprising:
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forming a first plurality of implants at the bottom of trenches located in said active area and at the bottom of trenches located in said edge termination area; and forming a second plurality of implants at the bottom of said trenches located in said active area while leaving alone said first plurality of implants located in said edge termination area, wherein said second plurality of implants formed at said bottom of said trenches located in said active area causes said implants formed at the bottom of said trenches located in said active area to reach a predetermined concentration. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for fabricating a MOSFET having an active area and an edge termination area, said method comprising:
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forming first and second semiconductor layers on a substrate; forming trenches in said active area and in said edge termination area in the topmost of said semiconductor layers; forming first multiple implants at the bottom of said trenches formed in said active area and in said edge termination area; masking said edge termination area; forming second multiple implants at the bottom of said trenches formed in said active area; and forming an oxide layer in said trenches formed in said edge termination area and forming an oxide layer in said trenches formed in said active area, wherein said oxide layer formed in said trenches in said edge termination area is thicker than said oxide layer formed in said trenches in said active area. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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20. A semiconductor device, comprising:
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an active area, comprising; a plurality of active area trenches; a source region adjacent one or more sidewalls of said plurality of active area trenches; a gate region located adjacent to and vertically underneath said source region; and a drain region located adjacent to and vertically underneath said gate region; and an edge termination area, comprising; a gate pickup trench; and a plurality of edge termination area trenches, wherein a first plurality of implants are made at the bottom of trenches formed in both said active area and said edge termination area, and wherein a second plurality of implants are made at said bottom of said trenches formed in said active area and causes said implants made at the bottom of said trenches formed in said active area to reach a predetermined concentration. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28)
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Specification