SOLID-STATE IMAGING DEVICE, IMAGING APPARATUS, AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE

• US 20090091806A1
• Filed: 10/08/2008
• Published: 04/09/2009
• Est. Priority Date: 10/09/2007
• Status: Active Grant

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: INUIYA, Masafumi
• Granted Patent: US 8,541,730 B2
• Time in Patent Office: Days
• US Class Current: 358/482
• CPC Class Codes: H01L 27/14634 Assemblies, i.e. Hybrid structures
• CPC Class Codes: H01L 27/14667 Colour imagers
• CPC Class Codes: H04N 25/701 Line sensors
• CPC Class Codes: H04N 25/74 Circuitry for scanning or addressing the pixel array
• CPC Class Codes: H04N 25/767 Horizontal readout lines, multiplexers or registers

Abstract

A solid-state imaging device is provided and includes: a substrate; a plurality of photoelectric conversion elements arranged in a one-dimensional or two-dimensional array above the substrate, the plurality of photoelectric conversion elements being divided into a plurality of photoelectric conversion element groups; a semiconductor substrate between the substrate and the plurality of photoelectric conversion elements, corresponding to each of the plurality of photoelectric conversion clement groups; and a signal output section in the semiconductor substrates. The signal output section outputs a signal corresponding to an electric charge generated in each photoelectric conversion elements of a photoelectric conversion element group corresponding to the semiconductor substrate.

Claims

1. A solid-state imaging device comprising:

a substrate;

a plurality of photoelectric conversion elements arranged in a one-dimensional or two-dimensional array above the substrate, the plurality of photoelectric conversion elements being divided into a plurality of photoelectric conversion element groups;

a semiconductor substrate between the substrate and the plurality of photoelectric conversion elements, corresponding to each of the plurality of photoelectric conversion element groups; and

a signal output section in the semiconductor substrates, wherein the signal output section outputs a signal corresponding to an electric charge generated in each photoelectric conversion elements of a photoelectric conversion element group corresponding to the semiconductor substrate.

2. The solid-state imaging device according to claim 1, wherein

each of the photoelectric conversion elements includes a pixel electrode, an opposite electrode opposite to the pixel electrode, and a photoelectric conversion layer between the opposite electrode and the pixel electrode,

a pad portion including a conductive member is provided on the semiconductor substrate and electrically connects to the pixel electrode of each photoelectric conversion element of the photoelectric conversion element group corresponding to the semiconductor substrate, and

the signal output section is connected to the pad portion.

3. The solid-state imaging device according to claim 2, wherein

the opposite electrode is disposed above the pixel electrode and has a one-sheet configuration common to the plurality of photoelectric conversion elements, and

the photoelectric conversion layer has a one-sheet configuration common to the plurality of photoelectric conversion elements.

4. The solid-state imaging device according to claim 2, wherein each of the photoelectric conversion elements is one of a Schottky photodiode, a PIN photodiode, and a metal insulator semiconductor photodiode which are formed of amorphous silicon.

5. The solid-state imaging device according to claim 2, wherein the photoelectric conversion layer includes a photoelectric conversion material containing selenium as a main component.

6. The solid-state imaging device according to claim 2, wherein the photoelectric conversion layer includes an organic photoelectric conversion material.

7. The solid-state imaging device according to claim 6, further comprising a mosaic color filter above the photoelectric conversion layer.

8. The solid-state imaging device according to claim 6, further comprising a scintillator above the photoelectric conversion layer.

9. The solid-state imaging device according to claim 2, wherein the signal output section includes a MOS circuit that is connected to the pad portion and that converts an electric charge trapped in the pixel electrode connected to the pad portion into a signal and outputs the signal.

10. The solid-state imaging device according to claim 2, wherein the signal output section includes:

a charge storage portion connected to the pad portion;

a charge transfer device that reads and transfers electric charges accumulated in the charge storage portion; and

an output portion that outputs signals corresponding to the electric charges transferred by the charge transfer device.

11. An imaging apparatus comprising:

a solid-state imaging device according to claim 1; and

a driving section for driving the solid-state imaging device, the driving section including a driving signal generating section that generates a driving signal for driving the signal output section and an encoding section that encodes the driving signal generated by the driving signal generating section,

wherein the semiconductor substrate includes a decoding section that decodes the driving signal supplied from the encoding section and supplies the decoded driving signal to the signal output section provided in the semiconductor substrate.

12. The imaging apparatus according to claim 11, wherein

the driving signal generating section generates the driving signal the number of times required for driving the signal output section provided in one semiconductor substrate, and

the encoding section simultaneously supplies a driving signal, which is obtained by encoding the driving signal, to all of the decoding section included in the solid-state imaging device.

13. The imaging apparatus according to claim 11, wherein

the substrate is a circuit board including the driving signal generating section and the encoding section, and

a wiring line for connection between the decoding section of the solid-state imaging device and the encoding section of the circuit board is provided to pass through the semiconductor substrate.

14. A method for manufacturing a solid-state imaging device including a substrate and a plurality of photoelectric conversion elements arranged in a one-dimensional or two-dimensional array above the substrate, the method comprising;

forming a signal output section in each of a plurality of semiconductor substrates, for outputting signals corresponding to electric charges generated in the photoelectric conversion elements;

forming a pad portion with a conductive material on each of the plurality of semiconductor substrate so that the pad portion is electrically connected to the signal output section;

arraying the plurality of semiconductor substrates on the substrate in a state where the pad portion is located upward; and

forming the photoelectric conversion elements each including a pixel electrode, a photoelectric conversion layer, and a opposite electrode, wherein the forming of the photoelectric conversion elements includes forming the pixel electrode on the pad portion of each of the plurality of semiconductor substrates, independently for every pad portion, forming the photoelectric conversion layer having a one-sheet configuration on the pixel electrode, and forming the opposite electrode having a one-sheet configuration on the photoelectric conversion layer.

15. A method for manufacturing a solid-state imaging device including a substrate and a plurality of photoelectric conversion elements arranged in a one-dimensional or two-dimensional array above the substrate, the method comprising:

forming a signal output section in each of a plurality of semiconductor substrates, for outputting signals corresponding to electric charges generated in the photoelectric conversion elements;

forming a pad portion with a conductive material on each of the plurality of semiconductor substrate so that the pad portion is electrically connected to the signal output section;

arraying the plurality of semiconductor substrates on the substrate in a state where the pad portion is located upward;

forming the plurality of photoelectric conversion elements each including a pixel electrode formed at a position corresponding to the pad portion of each of the plurality of semiconductor substrates, a photoelectric conversion layer that has a one-sheet configuration and is formed on the pixel electrode, and a opposite electrode that has a one-sheet configuration and is formed on the photoelectric conversion layer; and

bonding the pad portion and the pixel electrode corresponding to the pad portion together.