MULTI-GAS SPIRAL CHANNEL SHOWERHEAD

• US 20090095222A1
• Filed: 10/16/2007
• Published: 04/16/2009
• Est. Priority Date: 10/16/2007
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Grayson, Jacob, Tam, Alexander, Acharya, Sumedh
• Application Number:
  US11/873,141
• Publication Number:
  US 20090095222A1
• Time in Patent Office: Days
• US Class Current: 118/723.00R
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/45565 Shower nozzles

Abstract

A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of spiral channels which isolate the precursor gases. The precursor gases are injected into a mixing channel where the gases are mixed before entering a processing volume containing the substrates.

Claims

1. A showerhead apparatus comprising:

a first gas channel for a first precursor gas; and

a second gas channel for a second precursor gas, arranged to be coplanar with the first gas channel.

2. The apparatus of claim 1, wherein the first and second gas channels are arranged in an interleaved manner.

3. The apparatus of claim 2, wherein the first and second gas channels comprise spiral channels.

4. The apparatus of claim 2, further comprising a first plenum for supplying the first precursor gas to the first gas channel and a second plenum for supplying the second precursor gas to the second gas channel, wherein the first and second plenums are arranged above the first and second gas channels.

5. The apparatus of claim 4, wherein the first and second plenums are arranged one above the other.

6. The apparatus of claim 3, further comprising a third spiral channel for a heat exchanging medium.

7. The apparatus of claim 6, further comprising a fourth spiral channel for a gas, arranged to be coplanar with the first and second spiral gas channels.

8. The apparatus of claim 3, wherein the first and second spiral gas channels have injection holes that are arranged to define a plurality of injection zones.

9. The apparatus of claim 8, wherein the injection zones are concentric and alternate between an injection zone for a first precursor gas and an injection zone for a second precursor gas.

10. The apparatus of claim 8, wherein the injection zones are wedge-shaped and alternate between an injection zone for a first precursor gas and an injection zone for a second precursor gas.

11. The apparatus of claim 8, further comprising a third spiral gas channel having injection holes that are arranged to define inert gas injection zones between the plurality of injection zones for the first and second precursor gases.

12. A showerhead apparatus comprising:

a first gas channel for a first precursor gas having injection holes through which the first precursor gas is injected into a precursor mixing zone; and

a second gas channel for a second precursor gas having injection holes through which the second precursor gas is injected into the precursor mixing zone.

13. The apparatus of claim 12, wherein the first and second gas channels comprise spiral channels arranged in an interleaved manner.

14. The apparatus of claim 12, wherein the size of the injection holes through which the first and second precursor gases are injected have the same hole diameters.

15. The apparatus of claim 14, wherein the density of the injection holes through which the first and second precursor gases are injected are different, such that the hole density is greater at regions closer to the outer periphery of the showerhead apparatus.

16. The apparatus of claim 12, wherein the size of the injection holes through which the first and second precursor gases are injected have different hole diameters, such that the hole diameters are larger at hole positions closer to the outer periphery of the showerhead apparatus.

17. The apparatus of claim 12, wherein the size of the injection holes through which the first precursor gas is injected is different from the size of the injection holes through which the second precursor gas is injected.

18. The apparatus of claim 12, wherein the precursor mixing zone is defined on a side of the showerhead apparatus that faces a substrate processing volume.

19. The apparatus of claim 18, wherein the gas injection holes are staggered along the mixing zone.

20. The apparatus of claim 18, further comprising heat exchanging channels formed on the side of the showerhead apparatus that faces the substrate processing volume.

21. The apparatus of claim 20, wherein the heat exchanging channels have a plurality of walls that extend toward the substrate processing volume and define the mixing zone.

22. A showerhead apparatus comprising:

a first channel for a first precursor gas;

a second channel for a second precursor gas; and

a third channel for a heat exchanging medium.

23. The apparatus of claim 22, wherein the first and second channels are coplanar and interleaved.

24. The apparatus of claim 23, wherein the first and second channels comprise spiral channels.

25. The apparatus of claim 23, wherein the first and second channels have injection holes through which the first and second precursor gases are injected into a mixing zone that is defined by walls of the third channel.

26. The apparatus of claim 24, further comprising a fourth spiral channel for an inert gas.

27. The apparatus of claim 22, wherein the first precursor gas comprises a Group III precursor gas and the second precursor gas comprises a Group V precursor gas.

28. The apparatus of claim 27, wherein the first and second precursor gases comprise HVPE precursor gases.

29. The apparatus of claim 27, wherein the first and second precursor gases comprise MOCVD precursor gases.

30. The apparatus of claim 27, wherein the first and second precursor gases comprise precursor gases having the general formula MX₃ and M includes one of gallium, aluminum or indium and X includes one of chlorine, bromine, or iodine.

31. The apparatus of claim 22, further comprising one or more temperature sensors for measuring the temperature of the showerhead, wherein the flow rate and temperature of heat exchanging fluid that flows through the heat exchanging channels is controlled based on the measured temperature.

32. The apparatus of claim 27, wherein the first and second precursor gases comprise plasma species.