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MOSGATED POWER SEMICONDUCTOR DEVICE WITH SOURCE FIELD ELECTRODE

  • US 20090096019A1
  • Filed: 10/01/2008
  • Published: 04/16/2009
  • Est. Priority Date: 02/08/2007
  • Status: Active Grant
First Claim
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1. A power semiconductor device comprising:

  • a semiconductor body having a common conduction region of one conductivity type, and a base region of another conductivity type, said semiconductor body including a first surface;

    a trench extending from said first surface through said base region and into said common conduction region, said trench including at least two opposing sidewalls and a bottom;

    an insulated gate electrode including a gate insulation adjacent one of said sidewalls and a gate electrode adjacent said gate insulation and spanning said base region;

    a source field electrode inside said trench, said source field electrode including a first portion spanning said gate electrode and a second portion extending to a depth below said insulated gate electrode;

    a source region adjacent a sidewall of said trench and said base region; and

    a source contact ohmically coupled to said source region, and at least a portion of said source field electrode that faces a direction parallel to said semiconductor body.

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