MOSGATED POWER SEMICONDUCTOR DEVICE WITH SOURCE FIELD ELECTRODE
First Claim
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1. A power semiconductor device comprising:
- a semiconductor body having a common conduction region of one conductivity type, and a base region of another conductivity type, said semiconductor body including a first surface;
a trench extending from said first surface through said base region and into said common conduction region, said trench including at least two opposing sidewalls and a bottom;
an insulated gate electrode including a gate insulation adjacent one of said sidewalls and a gate electrode adjacent said gate insulation and spanning said base region;
a source field electrode inside said trench, said source field electrode including a first portion spanning said gate electrode and a second portion extending to a depth below said insulated gate electrode;
a source region adjacent a sidewall of said trench and said base region; and
a source contact ohmically coupled to said source region, and at least a portion of said source field electrode that faces a direction parallel to said semiconductor body.
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Abstract
A power semiconductor device which includes a source field electrode, and at least one insulated gate electrode adjacent a respective side of the source field electrode, the source field electrode and the gate electrode being disposed in a common trench.
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Citations
9 Claims
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1. A power semiconductor device comprising:
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a semiconductor body having a common conduction region of one conductivity type, and a base region of another conductivity type, said semiconductor body including a first surface; a trench extending from said first surface through said base region and into said common conduction region, said trench including at least two opposing sidewalls and a bottom; an insulated gate electrode including a gate insulation adjacent one of said sidewalls and a gate electrode adjacent said gate insulation and spanning said base region; a source field electrode inside said trench, said source field electrode including a first portion spanning said gate electrode and a second portion extending to a depth below said insulated gate electrode; a source region adjacent a sidewall of said trench and said base region; and a source contact ohmically coupled to said source region, and at least a portion of said source field electrode that faces a direction parallel to said semiconductor body. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification