SEMICONDUCTOR STORAGE APPARATUS AND SEMICONDUCTOR INTEGRATED CIRCUIT INCORPORATING THE SAME
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Abstract
An object is to provide a semiconductor memory device which can dynamically change the number of memory cells used as by-pass capacitors. In each memory block, one selector signal line is provided in parallel to one word line. In a pair of the word line and the selector signal line adjacent to each other, states are maintained opposite to each other. Further, in a memory block, one branch of a supply line is provided in parallel to one bit line. In each of the memory cells, a first transistor connects a capacitor to the bit line in accordance with the state of the word line. Furthermore, a second transistor connects the same capacitor to the branch of the supply line in accordance with the state of the selector signal line. In the memory cells aligned in a row direction, gates of the first transistors are connected to the same word line, and gates of the second transistors are connected to the same selector signal line.
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Citations
22 Claims
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1-13. -13. (canceled)
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14. A semiconductor memory device comprising a plurality of bit lines lined in parallel, a plurality of word lines lined in parallel along a direction orthogonal to the bit lines, at least one selector signal line, at least one supply line, and a plurality of memory cells, wherein each of the memory cell includes:
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a capacitor; a first transistor which is controlled by one of the word lines, and connects the capacitor to one of the bit lines; and a second transistor which is controlled by the selector signal line, and connects the capacitor directly to the supply line. - View Dependent Claims (15, 16, 17)
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- 18. A semiconductor integrated circuit comprising a semiconductor memory device which can connect and disconnect capacitors of memory cells to and from a supply line, the circuit which changes the number of the capacitors to be connected to the supply line in accordance with a process.
Specification