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Methods of Forming Integrated Circuit Devices Having Ion-Cured Electrically Insulating Layers Therein

  • US 20090098706A1
  • Filed: 10/12/2007
  • Published: 04/16/2009
  • Est. Priority Date: 10/12/2007
  • Status: Active Grant
First Claim
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1. A method of forming an integrated circuit device, comprising:

  • forming a trench in a surface of semiconductor substrate;

    filling the trench with an electrically insulating region having a seam therein by depositing an electrically insulating layer on sidewalls and a bottom of the trench;

    implanting curing ions into the electrically insulating region at a sufficient energy and dose to reduce a degree of atomic order therein; and

    annealing the electrically insulating region and curing ions therein at a sufficient temperature and for a sufficient duration to increase a degree of atomic order therein.

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