DRY-ETCHING METHOD
0 Assignments
0 Petitions
Accused Products
Abstract
A main etching step is effected in a state shown in
-
Citations
21 Claims
-
1-11. -11. (canceled)
-
12. :
- A plasma processing method for use in a plasma processing apparatus, which includes a vacuum chamber for accommodating a substrate to be processed therein to perform a plasma processing thereon;
an electrode provided in the vacuum chamber;
a first high frequency power supply for supplying a first high frequency power to the electrode;
a DC power supply for supplying a DC voltage to the electrode, the method comprising;starting supplying the DC voltage from the DC power supply to the electrode; and
then, starting supplying the first high frequency power from the first high frequency power supply to the electrode. - View Dependent Claims (13, 14, 15)
- A plasma processing method for use in a plasma processing apparatus, which includes a vacuum chamber for accommodating a substrate to be processed therein to perform a plasma processing thereon;
-
16. :
- A plasma processing method for use in a plasma processing apparatus, which includes a vacuum chamber for accommodating a substrate to be processed therein to perform a plasma processing thereon;
a lower electrode, provided in the vacuum chamber, on which the substrate is mounted;
an upper electrode provided in the vacuum chamber to face the lower electrode;
a first high frequency power supply for supplying a first high frequency power to the upper electrode;
a second high frequency power supply for supplying a second high frequency power to the lower electrode; and
a DC power supply supplying a DC voltage to the upper electrode, the method comprising;starting supplying the DC voltage from the DC power supply to the upper electrode; and
then, starting supplying the first high frequency power from the first high frequency power supply to the upper electrode and supplying the second high frequency power from the second high frequency power supply to the lower electrode. - View Dependent Claims (17, 18)
- A plasma processing method for use in a plasma processing apparatus, which includes a vacuum chamber for accommodating a substrate to be processed therein to perform a plasma processing thereon;
-
19. :
- A plasma processing apparatus comprising;
a vacuum chamber for accommodating a substrate to be processed therein to perform a plasma processing thereon; a lower electrode, provided in the vacuum chamber, on which the substrate is mounted; a upper electrode provided in the vacuum chamber to face the lower electrode; a first high frequency power supply for supplying a first high frequency power to the upper electrode; a second high frequency power supply for supplying a second high frequency power to the lower electrode; and a DC power supply for supplying a DC voltage to the upper electrode, wherein supplying the first high frequency power from the first high frequency power supply to the upper electrode and the second high frequency power from the second high frequency power supply to the lower electrode are started after supplying the DC voltage from the DC power supply to the upper electrode is started. - View Dependent Claims (20, 21)
- A plasma processing apparatus comprising;
Specification