INDUCTOR FORMED IN AN INTEGRATED CIRCUIT
First Claim
1. A method for forming an inductor in a semiconductor integrated circuit, the method comprising:
- forming a first inductor line on a metallization dielectric layer, the first inductor line having terminal end pads;
forming a dielectric layer over the first inductor line and the terminal end pads;
forming a first opening in the dielectric layer to expose the first inductor line, wherein the length of the opening is substantially co-extensive with the first inductor line;
filling the first opening with a conductive material to form a second inductor line that is in electrical communication and substantially co-extensive with the first inductor line and wherein the first and second inductor lines are cooperable to cause an inductive effect;
forming second openings in the dielectric layer to expose the terminal end pads subsequent to forming the second inductor line; and
filling the second openings with a conductive material to form contacts for the first and second inductor lines.
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Accused Products
Abstract
An inductor formed within an integrated circuit and a method for forming the inductor. The inductor comprises an underlying layer of aluminum formed in a first metallization layer and patterned and etched into the desired shape. In one embodiment the aluminum line comprises a spiral shape. According to a damascene process, a conductive runner, preferably of copper, is formed in a dielectric layer overlying the aluminum line and in electrical contact therewith. The aluminum line and the conductive runner cooperate to form the inductor. In another embodiment the aluminum line and the conductive runner are formed in a vertically spaced-apart orientation, with tungsten plugs or conductive vias formed to provide electrical connection therebetween. A method for forming the inductor comprises forming an aluminum conductive line and forming a conductive runner over the conductive line.
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Citations
6 Claims
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1. A method for forming an inductor in a semiconductor integrated circuit, the method comprising:
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forming a first inductor line on a metallization dielectric layer, the first inductor line having terminal end pads; forming a dielectric layer over the first inductor line and the terminal end pads; forming a first opening in the dielectric layer to expose the first inductor line, wherein the length of the opening is substantially co-extensive with the first inductor line; filling the first opening with a conductive material to form a second inductor line that is in electrical communication and substantially co-extensive with the first inductor line and wherein the first and second inductor lines are cooperable to cause an inductive effect; forming second openings in the dielectric layer to expose the terminal end pads subsequent to forming the second inductor line; and filling the second openings with a conductive material to form contacts for the first and second inductor lines. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification