ELECTRON TRANSPORT BI-LAYERS AND DEVICES MADE WITH SUCH BI-LAYERS

• US 20090101870A1
• Filed: 10/21/2008
• Published: 04/23/2009
• Est. Priority Date: 10/22/2007
• Status: Abandoned Application

• Current Assignee: DuPont Displays Incorporated (Corteva, Inc.)
• Original Assignee: E. I. du Pont de Nemours and Company (Corteva, Inc.)
• Inventors: Ziebarth, Jonathan M., Prakash, Shiva
• Application Number:
  US12/255,242
• Publication Number:
  US 20090101870A1
• Time in Patent Office: Days
• US Class Current: 252/301.350
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H10K 50/14 Carrier transporting layers
• CPC Class Codes: H10K 85/211 Fullerenes, e.g. C60
• CPC Class Codes: H10K 85/215 comprising substituents, e.g. PCBM
• CPC Class Codes: H10K 85/30 Coordination compounds
• CPC Class Codes: H10K 85/324 comprising aluminium, e.g. Alq3

Abstract

There are disclosed bi-layer compositions which are useful as electron transport layers. The bi-layers have a first layer containing electron transport material and a second layer containing a fullerene. Also disclosed are organic light emitting diodes including the electron transport bi-layers.

Claims

1. An electron transport bi-layer comprising:

a first layer comprising electron transport material; and

a second layer comprising a fullerene.

2. The electron transport bi-layer of claim 1, wherein the electron transport material is selected from the group consisting of bis(2-methyl-8-quinolinolato)(para-phenyl-phenolato)aluminum(III), tris(8-hydroxyquinolato)aluminum, tetrakis(8-hydroxyquinolato)-aluminum, and combinations thereof.

3. The electron transport bi-layer of claim 1, wherein the fullerene is selected from the group consisting of C60, C70 and C84, and combinations thereof.

4. The electron transport bi-layer of claim 1, wherein a fullerene is derivatized with a PCBM group.

5. The electron transport bi-layer of claim 1, wherein the fullerene is selected from the group consisting of C60, C61-PCBM, C70, C71-PCBM, and combinations thereof.

6. The electron transport bi-layer of claim 1, wherein the first layer is made up of two or more layers having the same or different composition.

7. The electron transport bi-layer of claim 1, wherein the bi-layer has a total thickness in the range of from 5 nm to 200 nm.

8. An organic electronic device comprising, in order, an anode, an electroactive layer, an electron transport bi-layer and a cathode, wherein the bi-layer comprises:

a first layer comprising electron transport material; and

a second layer comprising a fullerene;

and wherein the second layer is adjacent to the cathode.

9. The device of claim 8, wherein the electron transport material is selected from the group consisting of bis(2-methyl-8-quinolinolato)(para-phenyl-phenolato)aluminum(III), tris(8-hydroxyquinolato)aluminum, tetrakis(8-hydroxyquinolato)-aluminum, and combinations thereof.

10. The device of claim 8, wherein the fullerene is selected from the group consisting of C60, C70 and C84, and combinations thereof.

11. The device of claim 8, wherein a fullerene is derivatized with a PCBM group.

12. The device of claim 8, wherein the fullerene is selected from the group consisting of C60, C61-PCBM, C70, C71-PCBM, and combinations thereof.

13. The device of claim 8, further comprising a buffer layer between the anode and the electroactive layer.

14. The device of claim 13, wherein the buffer layer comprises a conducting polymer and a colloid-forming polymeric acid.

15. The device of claim 14, wherein the colloid-forming polymeric acid is fluorinated.

16. The device of claim 14, wherein the colloid-forming polymeric acid is a fluorinated sulfonic acid.

17. The device of claim 15, wherein the colloid-forming polymeric acid is perfluorinated.

18. The device of claim 16, wherein the colloid forming polymeric acid is perfluorinated.

19. The device of claim 8, wherein the first layer is made up of two or more layers having the same or different composition.

20. The device of claim 8, wherein the bi-layer has a total thickness in the range of from 5 nm to 200 nm.