NOVEL METHOD FOR FOUR DIRECTION LOW CAPACITANCE ESD PROTECTION
First Claim
1. A low capacitance device structure with associated parasitic bipolar transistors on a substrate for the purpose of providing four-way electrostatic voltage discharge protection to the active semiconductor devices connected to the I/O logic circuit line and including ESD protection of the power bus system comprising:
- a first doped region with contact area of opposite dopent than said substrate;
isolation elements within said substrate;
a first FET gate element upon said substrate surfacea second doped region within said first doped region of opposite dopent than said first doped region;
a plurality of third, fourth and fifth doped regions within said substrate of similar dopent to said substrate;
a plurality of sixth and seventh doped regions within said substrate of similar dopent to said substrate;
an electrical connection system for said plurality of doped region and said FET gate;
a surface passivation layer for said ESD protection device.
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Abstract
The invention describes a structure and a process for providing ESD semiconductor protection with reduced input capacitance. The structure consists of heavily doped P+ guard rings surrounding the I/O ESD protection device and the Vcc to Bss protection device. In addition, there is a heavily doped N+ guard ring surrounding the I/O protection device its P+ guard ring. The guard rings enhance structure diode elements providing enhanced ESD energy discharge path capability enabling the elimination of a specific conventional Vss to I/O pad ESD protection device. This reduces the capacitance seen by the I/O circuit while still providing adequate ESD protection for the active circuit devices.
90 Citations
15 Claims
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1. A low capacitance device structure with associated parasitic bipolar transistors on a substrate for the purpose of providing four-way electrostatic voltage discharge protection to the active semiconductor devices connected to the I/O logic circuit line and including ESD protection of the power bus system comprising:
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a first doped region with contact area of opposite dopent than said substrate; isolation elements within said substrate; a first FET gate element upon said substrate surface a second doped region within said first doped region of opposite dopent than said first doped region; a plurality of third, fourth and fifth doped regions within said substrate of similar dopent to said substrate; a plurality of sixth and seventh doped regions within said substrate of similar dopent to said substrate; an electrical connection system for said plurality of doped region and said FET gate; a surface passivation layer for said ESD protection device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification