CMOS image sensors having transparent transistors and methods of manufacturing the same

• US 20090101948A1
• Filed: 03/31/2008
• Published: 04/23/2009
• Est. Priority Date: 10/19/2007
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Park, Young-soo, Chang, Seung-hyuk
• Application Number:
  US12/078,404
• Publication Number:
  US 20090101948A1
• Time in Patent Office: Days
• US Class Current: 257/292
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers

Abstract

CMOS image sensors having transparent transistors and methods of manufacturing the same are provided. The CMOS image sensors include a photodiode and at least one transistor formed on the photodiode. The image sensor may include a plurality of transistors wherein at least one of the plurality of transistors is a transparent transistor.

Claims

1. A CMOS image sensor, comprising:

a photodiode; and

at least one transistor on the photodiode.

2. The CMOS image sensor of claim 1, further comprising a plurality of transistors.

3. The CMOS image sensor of claim 1, wherein the at least one transistor is a transparent transistor.

4. The CMOS image sensor of claim 1, wherein the at least one transistor includes a channel layer formed of a semiconductor oxide.

5. The CMOS image sensor of claim 4, wherein the semiconductor oxide is at least one selected from the group consisting of zinc oxide (ZnO), tin oxide (SnO), indium oxide (InO) and combinations thereof.

6. The CMOS image sensor of claim 5, wherein the semiconductor oxide includes at least one selected from the group consisting of tantalum (Ta), hafnium (Hf), indium (In), gallium (Ga), strontium (Sr) and combinations thereof.

7. The CMOS image sensor of claim 1, wherein each of the at least one transistor includes a source electrode and a drain electrode on a first insulating layer that covers the photodiode, a semiconductor oxide layer covering the source electrode and the drain electrode on the first insulating layer, a second insulating layer covering the semiconductor oxide layer, and a gate electrode on the second insulating layer between the source electrode and the drain electrode.

8. The CMOS image sensor of claim 7, wherein the source and drain electrodes are transparent electrodes.

9. The CMOS image sensor of claim 8, wherein the transparent electrodes are formed of indium tin oxide (ITO).