Micromechanical Capacitive Pressure Transducer and Production Method
1 Assignment
0 Petitions
Accused Products
Abstract
The present invention describes a method for producing a micromechanical capacitive pressure transducer and a micromechanical component produced by this method. First, a first electrode is produced in a doped semiconductor substrate.
In a further method step, a diaphragm with a second electrode is produced at the surface of the semiconductor substrate. Furthermore, it is provided to apply a first layer, which preferably is made of dielectric material, on the diaphragm and the semiconductor substrate. With the aid of this first layer, the diaphragm and the semiconductor substrate of the finished micromechanical capacitive pressure transducer are mechanically connected to one another directly or indirectly. Furthermore, a buried cavity is produced in the semiconductor substrate between the first and second electrode. In a following etching step, the diaphragm is finally dissolved out of the semiconductor substrate through openings in the first layer, the mechanical connection from the diaphragm to the semiconductor substrate being accomplished with the aid of the first layer. Due to this mechanical connection the diaphragm or the second electrode is able to be movably suspended above the first electrode.
-
Citations
34 Claims
-
1-17. -17. (canceled)
-
18. A method for producing a micromechanical capacitive pressure transducer, the method comprising:
-
producing a first electrode within a silicon semiconductor substrate; producing a monocrystalline, lattice-like structure for forming a second electrode above a first region, etched to be porous, in the silicon semiconductor substrate; applying an epitaxy layer on the silicon semiconductor substrate and the second electrode; applying a first layer on the epitaxy layer; producing a buried cavity between the first electrode and the second electrode by the first region; and forming a diaphragm on the second electrode above the first porous region by separating the epitaxy layer on the second electrode from the epitaxy layer on the semiconductor substrate with an etching process, wherein the separation produces a flexible, mechanical connection between the diaphragm and the silicon semiconductor substrate by the first layer. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27)
-
-
28. A mechanical component, comprising:
-
a first electrode within a silicon semiconductor substrate; a diaphragm having an epitaxy layer and a second electrode; a first layer on the diaphragm and the semiconductor substrate; and a cavity buried between the first electrode and the second electrode; wherein the diaphragm is held above the first electrode by the first layer so as to allow movement, and the second electrode is laterally set apart from the semiconductor substrate, and wherein the micromechanical capacitive pressure transducer is made by performing the following; producing the first electrode within a silicon semiconductor substrate; producing a monocrystalline, lattice-like structure for forming the second electrode above a first region, etched to be porous, in the silicon semiconductor substrate; applying an epitaxy layer on the silicon semiconductor substrate and the second electrode; applying the first layer on the epitaxy layer; producing the buried cavity between the first electrode and the second electrode by the first region; and forming the diaphragm on the second electrode above the first porous region by separating the epitaxy layer on the second electrode from the epitaxy layer on the semiconductor substrate with an etching process, wherein the separation produces a flexible, mechanical connection between the diaphragm and the silicon semiconductor substrate by the first layer. - View Dependent Claims (29, 30, 31, 32, 33, 34)
-
Specification