Lateral Power Diode with Self-Biasing Electrode
First Claim
1. A semiconductor diode comprising:
- a drift region of a first conductivity type;
an anode region of a second conductivity type in the drift region, the anode region and the drift region forming a pn junction therebetween;
a first highly doped silicon region of the first conductivity type in the drift region, the first highly doped silicon region being laterally spaced from the anode region such that upon biasing the semiconductor power diode in a conducting state, a current flows laterally between the anode region and the first highly doped silicon region through the drift region; and
a plurality of trenches extending into the drift region perpendicular to the current flow, each trench having a dielectric layer lining at least a portion of the trench sidewalls and at least one conductive electrode.
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Accused Products
Abstract
A semiconductor diode includes a drift region of a first conductivity type and an anode region of a second conductivity type in the drift region such that the anode region and the drift region form a pn junction therebetween. A first highly doped silicon region of the first conductivity type extends in the drift region, and is laterally spaced from the anode region such that upon biasing the semiconductor power diode in a conducting state, a current flows laterally between the anode region and the first highly doped silicon region through the drift region. A plurality of trenches extends into the drift region perpendicular to the current flow. Each trench includes a dielectric layer lining at least a portion of the trench sidewalls and also includes at least one conductive.
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Citations
32 Claims
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1. A semiconductor diode comprising:
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a drift region of a first conductivity type; an anode region of a second conductivity type in the drift region, the anode region and the drift region forming a pn junction therebetween; a first highly doped silicon region of the first conductivity type in the drift region, the first highly doped silicon region being laterally spaced from the anode region such that upon biasing the semiconductor power diode in a conducting state, a current flows laterally between the anode region and the first highly doped silicon region through the drift region; and a plurality of trenches extending into the drift region perpendicular to the current flow, each trench having a dielectric layer lining at least a portion of the trench sidewalls and at least one conductive electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A schottky diode comprising:
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a drift region of a first conductivity type; a lightly doped silicon region of the first conductivity type in the drift region; a conductor layer over and in contact with the lightly doped silicon region, the conductor layer forming a schottky contact with the lightly doped silicon region; a highly doped silicon region of the first conductivity type in the drift region, the highly doped silicon region being laterally spaced from the lightly doped silicon region such that upon biasing the schottky diode in a conducting state, a current flows laterally between the lightly doped silicon region and the highly doped silicon region through the drift region; and a plurality of trenches extending into the drift region perpendicular to the current flow, each trench having a dielectric layer lining at least a portion of the trench sidewalls and at least one conductive electrode. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method of forming a semiconductor diode comprising:
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forming an anode region in a drift region of a first conductivity type, the anode region being of a second conductivity type, the anode region and the drift region forming a pn junction therebetween; forming a first highly doped silicon region of the first conductivity type in the drift region, the first highly doped silicon region being laterally spaced from the anode region such that upon biasing the semiconductor power diode in a conducting state, a current flows laterally between the anode region and the first highly doped silicon region through the drift region; forming a plurality of trenches extending into the drift region perpendicular to the current flow; forming a dielectric layer lining at least a portion of each trench sidewalls; and forming at least one conductive electrode in each trench. - View Dependent Claims (24, 25, 26, 27)
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28. A method of forming a schottky diode, comprising:
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a lightly doped silicon region of a first conductivity type in a drift region of the first conductivity type; forming a conductor layer over and in contact with the lightly doped silicon region, the conductor layer forming a schottky contact with the lightly doped silicon region; forming a highly doped silicon region of the first conductivity type in the drift region, the highly doped silicon region being laterally spaced from the lightly doped silicon region such that upon biasing the schottky diode in a conducting state, a current flows laterally between the lightly doped silicon region and the highly doped silicon region through the drift region; forming a plurality of trenches extending into the drift region perpendicular to the current flow; forming a dielectric layer lining at least a portion of each trench sidewalls; and forming at least one conductive electrode in each trench. - View Dependent Claims (29, 30, 31, 32)
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Specification