Through-Silicon Vias and Methods for Forming the Same
First Claim
Patent Images
1. An integrated circuit structure comprising:
- a substrate;
a through-silicon via (TSV) extending into the substrate;
a TSV pad spaced apart from the TSV; and
a metal line over, and electrically connecting, the TSV and the TSV pad.
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Abstract
An integrated circuit structure and methods for forming the same are provided. The integrated circuit structure includes a substrate; a through-silicon via (TSV) extending into the substrate; a TSV pad spaced apart from the TSV; and a metal line over, and electrically connecting, the TSV and the TSV pad.
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Citations
27 Claims
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1. An integrated circuit structure comprising:
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a substrate; a through-silicon via (TSV) extending into the substrate; a TSV pad spaced apart from the TSV; and a metal line over, and electrically connecting, the TSV and the TSV pad. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An integrated circuit structure comprising:
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a semiconductor substrate; a plurality of dielectric layers over the semiconductor substrate; a through-silicon via (TSV) penetrating the plurality of dielectric layers and the semiconductor substrate, wherein the TSV extends to a back surface of the semiconductor substrate; a TSV pad directly over the plurality of dielectric layers, wherein the TSV pad is horizontally on only one side of the TSV pad; and a metal line overlying and electrically connecting the TSV pad and the TSV. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A method of forming an integrated circuit structure, the method comprising:
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providing a wafer comprising; a semiconductor substrate; and a through-silicon via (TSV) pad over the semiconductor substrate; forming a TSV opening extending from a top surface of the wafer into the semiconductor substrate, wherein the TSV opening is spaced apart from the TSV pad; forming a TSV in the TSV opening; and forming a metal line electrically connecting the TSV and the TSV pad. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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24. A method of forming an integrated circuit structure, the method comprising:
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providing a wafer comprising; a semiconductor substrate; and a through-silicon via (TSV) pad over the semiconductor substrate; blanket forming a diffusion barrier layer over the wafer, wherein the diffusion barrier layer extends into a TSV opening; blanket forming a copper seed layer on the diffusion barrier layer; forming and patterning a mask layer, wherein the TSV pad, the TSV opening, and a region therebetween are exposed through the mask layer; selectively forming a copper layer on the copper seed layer, wherein the copper layer fills the TSV opening to form a TSV, and wherein the copper layer extends over the TSV pad; removing the mask layer to expose portions of the copper seed layer and the diffusion barrier layer underlying the mask layer; etching the exposed portions of the copper seed layer; and etching the exposed portions of the barrier layer. - View Dependent Claims (25, 26, 27)
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Specification