SEMICONDUCTOR MEMORY DEVICE WITH VARIABLE RESISTANCE ELEMENT

• US 20090102598A1
• Filed: 07/05/2006
• Published: 04/23/2009
• Est. Priority Date: 07/20/2005
• Status: Abandoned Application

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Yamazaki, Shinobu, Otabe, Takuya
• Application Number:
  US11/995,876
• Publication Number:
  US 20090102598A1
• Time in Patent Office: Days
• US Class Current: 338/20
• CPC Class Codes: H10B 63/30 comprising selection components having three or more electrodes, e.g. transistors
• CPC Class Codes: H10N 70/026 by physical vapor deposition, e.g. sputtering
• CPC Class Codes: H10N 70/063 by etching of pre-deposited switching material layers, e.g. lithography
• CPC Class Codes: H10N 70/20 Multistable switching devices, e.g. memristors
• CPC Class Codes: H10N 70/801 Constructional details of multistable switching devices
• CPC Class Codes: H10N 70/826 adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
• CPC Class Codes: H10N 70/8833 Binary metal oxides, e.g. TaOx
• CPC Class Codes: H10N 70/8836 Complex metal oxides, e.g. perovskites, spinels

Abstract

A semiconductor memory device comprising a variable resistance element having a variable resistor between a first electrode and a second electrode, in which electric resistance is changed by applying a voltage pulse between the electrodes comprises at least one reaction preventing film made of a material having an action of blocking the permeation of a reduction species promoting a reduction reaction of the variable resistor and an oxidation species promoting an oxidation reaction of the variable resistor. This prevents the resistance value of the variable resistance element from fluctuating due to a reduction reaction or an oxidation reaction of the variable resistor caused by hydrogen or oxygen existing in the manufacturing steps, so that a semiconductor memory device having a small variation of the resistance value and having a good controllability can be realized with good repeatability.

Claims

1. A semiconductor memory device comprising:

a variable resistance element having a variable resistor between a first electrode and a second electrode, in which electric resistance between the first electrode and the second electrode is changed by applying a voltage pulse between the first electrode and the second electrode; and

at least one layer of a reaction preventing film.

2. The semiconductor memory device according to claim 1, wherein

the reaction preventing film prevents diffusion of a reduction species and suppresses reduction reaction of the variable resistor.

3. The semiconductor memory device according to claim 1, wherein

the reaction preventing film prevents diffusion of an oxidation species and suppresses an oxidation reaction of the variable resistor.

4. The semiconductor memory device according to claim 1, wherein the reaction preventing film is arranged in close contact with the variable resistance element.

5. The semiconductor memory device according to claim 1, wherein the reaction preventing film is arranged between the variable resistance element and a surface protecting film.

6. The semiconductor memory device according to claim 1, wherein a conductive material filled in a contact hole formed on the first electrode or the second electrode contains a material having a function of suppressing diffusion of at least any one of the reduction species and the oxidation species.

7. The semiconductor memory device according to claim 6, wherein

the conductive material filled in the contact hole is a conductive nitride containing at least one element selected from Si, Al, Ti, Ta, Hf, and W, a conductive oxide containing at least one element selected from Ir and Ru, a metal element selected from Ti, Ta, Ir, and Ru, or an alloy containing at least one element selected from Ti, Ta, Ir, Ru, and W.

8. The semiconductor memory device according to claim 1, wherein

the reaction preventing film is an oxide containing at least one element selected from Al, Ti, Ta, Hf, Pb, La, Zr, Sr, Bi, Pr, Ca, Mn, Si, Mg, and Ce, a nitride containing at least one element selected from Si, Al, Ti, Ta, Hf, and W, a metal element selected from Ti, Ta, Ir, and Ru, or an alloy containing at least one element selected from Ti, Ta, Ir, Ru, and W.

9. The semiconductor memory device according to claim 1, wherein

the variable resistor is an oxide having a perovskite structure containing at least one element selected from Pr, Ca, La, Sr, Gd, Nd, Bi, Ba, A, Ce, Pb, Sm, and Dy and at least one element selected from Ta, Tin, Cu, Mn, Cr, Co, Fe, Ni, and Ga.

10. The semiconductor memory device according to claim 1, wherein

the variable resistor is an oxide having a perovskite structure represented by any one of the following formulas (0≦

X≦

1, 0≦

Z<

1);

Pr_1-xCa_x[Mn_1-zM_z]O₃ (where M is any element selected from Ta, Ti, Cu, Cr, Co, Fe, Ni, and Ga);

La_1-xAE_xMnO₃ (where AE is any divalent alkaline earth metal selected from Ca, Sr, Pb, and Ba);

RE_1-xSr_xMnO₃ (where RE is any trivalent rare earth metal selected from Sm, La, Pr, Nd, Gd, and Dy);

La_1-xCo_x[Mn_1-zCo_z]O₃;

Gd_1-xCa_xMnO₃; and

Nd_1-xGd_xMnO₃.

11. The semiconductor memory device according to claim 1, wherein

the variable resistor is a ZnSe—

Ge hetero structure or a metal oxide containing at least one element selected from Ti, Nb, Hf, Zr, Ta, Ni, V, Zn, Sn, In, Th, and Al.

12. A semiconductor memory device comprising

a variable resistance element having a variable resistor between a first electrode and a second electrode in which electric resistance between the first electrode and the second electrode is changed by applying a voltage pulse between the first electrode and the second electrode, wherein

a conductive material filled in a contact hole formed on the first electrode or the second electrode contains a material having a function of suppressing diffusion of at least one of a reduction species and an oxidation species.

13. The semiconductor memory device according to claim 12, wherein

the conductive material filled in the contact hole is a conductive nitride containing at least one element selected from Si, Al, Ti, Ta, Hf and W, a conductive oxide containing at least one element selected from Ir and Ru, a metal element selected from Ti, Ta, Ir, and Ru, or an alloy containing at least one element selected from Ti, Ta, Ir, Ru, and W.