ELECTRO-OPTICAL DEVICE

• US 20090102774A1
• Filed: 08/12/2008
• Published: 04/23/2009
• Est. Priority Date: 10/22/2007
• Status: Abandoned Application

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: HATTORI, Yasunori
• Application Number:
  US12/190,336
• Publication Number:
  US 20090102774A1
• Time in Patent Office: Days
• US Class Current: 345/92
• CPC Class Codes: G02F 1/133382 Heating or cooling of liquid crystal cells other than for activation, e.g. circuits or arrangements for temperature control, stabilisation or uniform distribution over the cell
• CPC Class Codes: G09G 2300/0426 Layout of electrodes and connections
• CPC Class Codes: G09G 2320/041 Temperature compensation
• CPC Class Codes: G09G 2330/06 Handling electromagnetic interferences [EMI], covering emitted as well as received electromagnetic radiation
• CPC Class Codes: G09G 3/3258 with pixel circuitry controlling the voltage across the light-emitting element
• CPC Class Codes: G09G 3/3648 using an active matrix G09G3/367 - G09G3/3696 take precedence
• CPC Class Codes: G09G 3/3659 the addressing of the pixel involving the control of two or more scan electrodes or two or more data electrodes, e.g. pixel voltage dependant on signal of two data electrodes
• CPC Class Codes: G09G 3/3685 Details of drivers for data electrodes

Abstract

Provided is an electro-optical device including a device substrate having a pixel region in which a plurality of pixels each including a pixel electrode and a pixel transistor are arranged, wherein, in the device substrate, a temperature detection resistance line extends along at least a half of the whole periphery of the pixel region on the periphery of the pixel region.

Claims

1. An electro-optical device including a device substrate having a pixel region in which a plurality of pixels each including a pixel electrode and a pixel transistor are arranged, wherein, in the device substrate, a temperature detection resistance line extends along at least a half of the whole periphery of the pixel region on the periphery of the pixel region.

2. The electro-optical device according to claim 1, wherein the resistance line extends one end thereof and is bent such that the other end thereof approaches one end thereof.

3. The electro-optical device according to claim 2, wherein the resistance line has a planar shape in which one wire is folded midway.

4. The electro-optical device according to claim 1, wherein:

the pixel region has a rectangular planar shape, and

the resistance line extends along at least two adjacent sides of the pixel region.

5. The electro-optical device according to claim 4, wherein the resistance line extends along at least three sides of the pixel region.

6. The electro-optical device according to claim 1, wherein the resistance line is the same layer as any one of a plurality of conductive layers configuring the pixel transistor.

7. The electro-optical device according to claim 1, wherein the resistance line is formed of a metal film.

8. The electro-optical device according to claim 1, wherein:

a driving circuit is formed on the outer side of the pixel region in the device substrate, and

the resistance line extends in a region sandwiched between the pixel region and the driving circuit.

9. The electro-optical device according to claim 8, wherein a signal line which extends from the pixel region to the driving circuit and the resistance line are formed between different layers among a plurality of layers sandwiched by a plurality of insulating films.

10. The electro-optical device according to claim 8, wherein a signal line which extends from the pixel region to the driving circuit and the resistance line are formed between the same layers among a plurality of layers sandwiched by a plurality of insulating films, and

between the layers, the signal line is disconnected in a portion in which the signal line and the resistance line cross each other and an interconnection bridge wire for electrically connecting the disconnected portions of the signal line is formed between layers different from the layers.

11. The electro-optical device according to claim 1, wherein a liquid crystal layer is held between the device substrate and a counter substrate which faces the device substrate.

12. The electro-optical device according to claim 1, wherein, in the device substrate, a function layer for an organic electroluminescence element is formed on the pixel electrode.