Method for Forming Tantalum Nitride Film
First Claim
1. A method for forming a tantalum nitride film comprising the steps, according to the CVD technique, of simultaneously introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula:
- N=(R, R′
) (in the formula, R and R′
may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) and NH3 gas into a film-forming chamber, reducing the raw gas with the NH3 gas and forming a reduced compound film on a substrate to thus partially remove the R(R′
) groups bonded to N atoms in the resulting reduced compound film; and
then introducing a hydrogen atom-containing gas into the chamber, and reacting the hydrogen atom-containing gas with the reduced compound film to thus break Ta—
N bonds present in the reduced compound film, to remove the R(R′
) groups, which is bonded to N atom, remaining in the film through cleavage, and to thus form a tantalum nitride film rich in tantalum atoms.
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Abstract
A tantalum nitride film rich in tantalum atoms is formed, according to the CVD technique, by simultaneously introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N=(R, R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) and NH3 gas into a film-forming chamber, reacting the raw gas with the NH3 gas and forming a reduced compound having Ta—NH3 on a substrate; and then introducing a hydrogen atom-containing gas into the chamber to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to Cu film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
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Citations
8 Claims
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1. A method for forming a tantalum nitride film comprising the steps, according to the CVD technique, of simultaneously introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula:
- N=(R, R′
) (in the formula, R and R′
may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) and NH3 gas into a film-forming chamber, reducing the raw gas with the NH3 gas and forming a reduced compound film on a substrate to thus partially remove the R(R′
) groups bonded to N atoms in the resulting reduced compound film; and
then introducing a hydrogen atom-containing gas into the chamber, and reacting the hydrogen atom-containing gas with the reduced compound film to thus break Ta—
N bonds present in the reduced compound film, to remove the R(R′
) groups, which is bonded to N atom, remaining in the film through cleavage, and to thus form a tantalum nitride film rich in tantalum atoms. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
- N=(R, R′
Specification