METHODS OF DEPOSITING A RUTHENIUM FILM
First Claim
1. A method of depositing a ruthenium film, the method comprising:
- loading a substrate into a reactor; and
conducting a plurality of deposition cycles, at least one of the cycles comprising steps of;
supplying a ruthenium precursor to the reactor;
supplying oxygen (O2) gas to the reactor; and
supplying ammonia (NH3) gas to the reactor after supplying the ruthenium precursor and the oxygen gas without supplying the ruthenium precursor and the oxygen gas.
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Accused Products
Abstract
Cyclical methods of depositing a ruthenium layer on a substrate are provided. In one process, initial or incubation cycles include supplying alternately and/or simultaneously a ruthenium precursor and an oxygen-source gas to deposit ruthenium oxide on the substrate. The ruthenium oxide deposited on the substrate is reduced to ruthenium, thereby forming a ruthenium layer. The oxygen-source gas may be oxygen gas (O2). The ruthenium oxide may be reduced by supplying a reducing agent, such as ammonia (NH3) gas. The methods provide a ruthenium layer having good adherence to an underlying high dielectric layer while providing good step coverage over structures on the substrate. After nucleation, subsequent deposition cycles can be altered to optimize speed and/or conformality rather than adherence.
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Citations
31 Claims
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1. A method of depositing a ruthenium film, the method comprising:
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loading a substrate into a reactor; and conducting a plurality of deposition cycles, at least one of the cycles comprising steps of; supplying a ruthenium precursor to the reactor; supplying oxygen (O2) gas to the reactor; and supplying ammonia (NH3) gas to the reactor after supplying the ruthenium precursor and the oxygen gas without supplying the ruthenium precursor and the oxygen gas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A method of depositing a ruthenium film, the method comprising:
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loading a substrate into a reactor; and conducting a plurality of deposition cycles, at least one of the cycles comprising steps of; supplying a ruthenium precursor to the reactor; supplying an oxygen-source gas to the reactor to deposit oxidized ruthenium on the substrate; and reducing the oxidized ruthenium deposited on the substrate to ruthenium with non-plasma ammonia (NH3) gas. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31)
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Specification