SELECTIVE ETCHING OF SILICON NITRIDE

• US 20090104782A1
• Filed: 10/07/2008
• Published: 04/23/2009
• Est. Priority Date: 10/22/2007
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Ge, Zhenbin, Lu, Nan, LU, XINLAING, Yang, Haichun, Kao, Chien-Teh, Or, David T., Chang, Mei
• Granted Patent: US 8,252,696 B2
• Time in Patent Office: Days
• US Class Current: 438/715
• CPC Class Codes: H01L 21/31116 by dry-etching

Abstract

Methods for etching dielectric layers comprising silicon and nitrogen are provided herein. In some embodiments, such methods may include providing a substrate having a dielectric layer comprising silicon and nitrogen disposed thereon, forming reactive species from a process gas comprising hydrogen (H₂) and nitrogen trifluoride (NF₃) using a remote plasma; and etching the dielectric layer using the reactive species. In some embodiments, an oxide layer is disposed adjacent to the dielectric layer. In some embodiments, the flow rate ratio of the process gas can be adjusted such that an etch selectivity of the dielectric layer to at least one of the oxide layer or the substrate is between about 0.8 to about 4.

Claims

1. A method for etching a dielectric layer comprising:

providing a substrate having a dielectric layer comprising silicon and nitrogen;

forming reactive species from a process gas comprising hydrogen (H₂) and nitrogen trifluoride (NF₃) using a remote plasma; and

etching the dielectric layer using the reactive species.

2. The method of claim 1, wherein an oxide layer is disposed adjacent the dielectric layer.

3. The method of claim 2, wherein the oxide layer includes silicon dioxide (SiO₂).

4. The method of claim 2, wherein an etch selectivity of the dielectric layer to at least one of the oxide layer or the substrate is between about 0.8 to about 4.

5. The method of claim 2, wherein the oxide layer comprises a gate oxide layer of a transistor device.

6. The method of claim 2, wherein the oxide layer is disposed above the dielectric layer and includes a feature defined therein that at least partially exposes the dielectric layer.

7. The method of claim 1, wherein the dielectric layer includes at least one of silicon nitride (SiN), nitrogen doped silicon carbide (SiNC), or oxygen and nitrogen doped silicon carbide (SiONC).

8. The method of claim 1, wherein the substrate further comprises at least one of silicon, polysilicon, a metal silicide, n-doped silicon, or p-doped silicon.

9. The method of claim 1, wherein the flow rate ratio of NF₃:

H₂ is between about 1;

1 to about 1;

10.

10. The method of claim 1, wherein the process gas comprises nitrogen trifluoride (NF₃), ammonia (NH₃), and hydrogen (H₂).

11. The method of claim 1, wherein etching the dielectric layer further comprises:

maintaining a substrate support pedestal upon which the substrate is disposed at a temperature of between about 35 to about 80 degrees Celsius.

12. A computer readable medium comprising instructions that, when executed by a processor, causes a process chamber to perform a method of etching a substrate disposed in the process chamber and having a dielectric layer comprising silicon and nitrogen, the method comprising:

forming reactive species from a process gas comprising hydrogen (H₂) and nitrogen trifluoride (NF₃) using a remote plasma; and

etching the dielectric layer using the reactive species.

13. The computer readable medium of claim 12, wherein the flow rate ratio of NF₃:

H₂ is between about 1;

1 to about 1;

10.

14. The computer readable medium of claim 12, wherein an oxide layer is disposed adjacent the dielectric layer.

15. The computer readable medium of claim 12, wherein the dielectric layer includes at least one of silicon nitride (SiN), nitrogen doped silicon carbide (SiNC), or oxygen and nitrogen doped silicon carbide (SiONC).

16. The computer readable medium of claim 12, wherein the substrate further comprises at least one of silicon, a metal silicide, n-doped silicon, or p-doped silicon.

17. The computer readable medium of claim 12, wherein an etch selectivity of the dielectric layer to at least one of the oxide layer or the substrate is between about 0.8 to about 4.

18. The computer readable medium of claim 12, wherein the temperature is maintained between about 35 to about 80 degrees Celsius.

19. The computer readable medium of claim 12, wherein an etch selectivity of the dielectric layer to a least one of the oxide layer or the substrate is between about 0.8 to about 4.

20. The computer readable medium of claim 12, wherein the process gas comprises nitrogen trifluoride (NF₃), ammonia (NH₃), and hydrogen (H₂).