Methods for Forming a Dielectric Layer Within Trenches
First Claim
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1. A method for forming a semiconductor structure, comprising:
- reacting a silicon precursor and an atomic oxygen precursor at a processing temperature of about 150°
C. or less to form a silicon oxide layer over a substrate; and
ultra-violet (UV) curing the silicon oxide layer within an oxygen-containing environment.
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Abstract
A method for forming a semiconductor structure includes reacting a silicon precursor and an atomic oxygen or nitrogen precursor at a processing temperature of about 150° C. or less to form a silicon oxide or silicon-nitrogen containing layer over a substrate. The silicon oxide or silicon-nitrogen containing layer is ultra-violet (UV) cured within an oxygen-containing environment.
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Citations
24 Claims
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1. A method for forming a semiconductor structure, comprising:
- reacting a silicon precursor and an atomic oxygen precursor at a processing temperature of about 150°
C. or less to form a silicon oxide layer over a substrate; and
ultra-violet (UV) curing the silicon oxide layer within an oxygen-containing environment. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
- reacting a silicon precursor and an atomic oxygen precursor at a processing temperature of about 150°
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12. A method for forming a semiconductor structure, comprising:
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interacting a silicon-containing precursor with at least one radical nitrogen precursor at a processing temperature of about 150°
C. or less to form a silicon-nitrogen containing layer over a substrate, the silicon-containing precursor comprising two silicon atoms; andultra-violet (UV) curing the silicon-nitrogen containing layer within an oxygen-containing environment to form a silicon oxide layer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 22, 23, 24)
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21. The method of claim 21, wherein the ozone has a percentage of about 18% or less.
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