EPITAXIAL REACTOR WITH SUSCEPTOR CONTROLLED POSITIONING
First Claim
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1. A reactor for chemical vapour deposition comprising:
- a reaction chamber, a susceptor which can be moved in the chamber, a transmitting means to transmit electromagnetic radiation towards the susceptor, and a detecting means to detect the radiation, at least one projecting reference element seated on the susceptor, capable of reflecting the radiation towards said detecting means for detecting it.
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Abstract
The invention relates to a system for controlling the positioning of a susceptor (2) rotating in the reaction chamber (3) of an epitaxial reactor. The control is carried out on the basis of the different path of a laser beam transmitted by a source (15) when it is reflected by a pin (8) arranged on the susceptor (2).
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Citations
17 Claims
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1. A reactor for chemical vapour deposition comprising:
- a reaction chamber, a susceptor which can be moved in the chamber, a transmitting means to transmit electromagnetic radiation towards the susceptor, and a detecting means to detect the radiation, at least one projecting reference element seated on the susceptor, capable of reflecting the radiation towards said detecting means for detecting it.
- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method for controlling the position of a susceptor (2) of a reactor for chemical vapour deposition, the method comprising the steps of:
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arranging an element projecting from the surface of the susceptor, capable of reflecting electromagnetic radiation; projecting a beam of electromagnetic radiation onto the susceptor in motion; detecting the difference of the path of the beam when it is reflected by the projecting element; inputting the position of the susceptor following the detection of the different path of the beam; causing movement of the susceptor on the basis of the position input. - View Dependent Claims (17)
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Specification