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Trench MOSFET with implanted drift region

  • US 20090108338A1
  • Filed: 10/31/2007
  • Published: 04/30/2009
  • Est. Priority Date: 10/31/2007
  • Status: Active Grant
First Claim
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1. A trenched semiconductor power device comprising a plurality of trenched gates surrounded by source regions near a top surface of a semiconductor substrate encompassed in body regions, said trenched semiconductor power device further comprising:

  • tilt-angle implanted drift regions surrounding said trenched gate below said body regions for on-resistance reduction, and preventing a degraded breakdown voltage with a thick oxide in lower portion of trench sidewall and bottom.

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