SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE
First Claim
1. A method for manufacturing a semiconductor component, comprising:
- providing a semiconductor material having first and second opposing surfaces;
forming at least one trench in the semiconductor material, the at least one trench having at least one sidewall;
forming a dielectric material in the at least one trench;
forming a semiconductor material in the at least one trench, the dielectric material between the semiconductor material and the at least one sidewall of the at least one trench;
forming a portion of a gate structure within the at least one trench; and
forming additional semiconductor material within the at least one trench, the additional semiconductor material electrically separated from the portion of the gate structure.
7 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor component that includes a field plate and a semiconductor device and a method of manufacturing the semiconductor component. A semiconductor material includes an epitaxial layer disposed on a semiconductor substrate. A trench having an upper portion and a lower portion is formed in the epitaxial layer. A portion of a field plate is formed in the lower portion of the trench, wherein the field plate is electrically isolated from trench sidewalls. A gate structure is formed in the upper portion of the trench, wherein a gate oxide is formed from opposing sidewalls of the trench. Gate electrodes are formed adjacent to the gate oxide formed from the opposing sidewalls and a dielectric material is formed adjacent to the gate electrode. Another portion of the field plate is formed in the upper portion of the trench and cooperates with the portion of the field plate formed in the lower portion of the trench to form the field plate.
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Citations
20 Claims
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1. A method for manufacturing a semiconductor component, comprising:
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providing a semiconductor material having first and second opposing surfaces; forming at least one trench in the semiconductor material, the at least one trench having at least one sidewall; forming a dielectric material in the at least one trench; forming a semiconductor material in the at least one trench, the dielectric material between the semiconductor material and the at least one sidewall of the at least one trench; forming a portion of a gate structure within the at least one trench; and forming additional semiconductor material within the at least one trench, the additional semiconductor material electrically separated from the portion of the gate structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for manufacturing a semiconductor component, comprising:
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providing a semiconductor substrate of a first conductivity type; forming an epitaxial layer of the first conductivity type and a first resistivity over the semiconductor substrate, the epitaxial layer having a major surface; forming a trench in the epitaxial layer, the trench having first and second sidewalls and a second trench region over a first trench region; forming a field plate in the first trench region; forming a gate dielectric adjacent the first sidewall in the second trench region; forming a gate electrode in the second trench region, the gate electrode adjacent the gate dielectric; forming a dielectric material adjacent the gate electrode; and forming a conductive plug in the second trench region, the conductive plug electrically coupled to the field plate and electrically isolated from the gate electrode. - View Dependent Claims (13, 14, 15, 16, 17)
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18. A semiconductor component, comprising:
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a semiconductor substrate of a first conductivity type; an epitaxial layer of the first conductivity type and a first resistivity over the semiconductor substrate, the epitaxial layer having a major surface; a trench extending from the major surface into the epitaxial layer, the trench having first and second sidewalls; an electrically conductive material within a first portion of the trench, the electrically conductive material spaced apart from the first and second sidewalls by a dielectric material; a gate oxide adjacent the first and second sidewalls of a second portion of the trench; a gate electrode adjacent the gate oxide; dielectric spacers within a second portion of the trench, the dielectric spacers adjacent the gate electrode; and additional electrically conductive material within the second portion of the trench, the additional electrically conductive material spaced apart from the gate electrode by the dielectric spacers. - View Dependent Claims (19, 20)
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Specification