SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE
First Claim
1. A method for manufacturing a semiconductor component, comprising:
- providing a semiconductor material having first and second opposing surfaces;
forming first and second trenches in the semiconductor material, wherein the first and second trenches have at least one sidewall and extend from the first surface into the semiconductor material a first distance;
forming a dielectric material in the first and second trenches;
forming a semiconductor material in the first and second trenches, the dielectric material in the first trench between the semiconductor material in the first trench and the at least one sidewall of the first trench and the dielectric material in the second trench between the semiconductor material in the second trench and the at least one sidewall of the second trench; and
forming a gate structure between the first and second trenches by;
forming a third trench in the semiconductor material, the third trench having at least one sidewall and extending from the first surface into the semiconductor material a second distance;
forming a gate dielectric in the third trench; and
forming a semiconductor material in the third trench, wherein the gate dielectric is between the at least one sidewall of the third trench and the semiconductor material in the third trench.
3 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor component that includes a field plate and a semiconductor device and a method of manufacturing the semiconductor component. A semiconductor material includes an epitaxial layer disposed on a semiconductor substrate. Field plate trenches extend into the semiconductor material and field plates are formed in the field plate trenches. A gate trench is formed between two adjacent field plate trenches and another gate trench is formed adjacent one of the field plate trenches. Gate structures are formed in the gate trenches, wherein each gate structure includes a gate oxide and a gate conductor. A conductor electrically couples the field plates together.
24 Citations
21 Claims
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1. A method for manufacturing a semiconductor component, comprising:
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providing a semiconductor material having first and second opposing surfaces; forming first and second trenches in the semiconductor material, wherein the first and second trenches have at least one sidewall and extend from the first surface into the semiconductor material a first distance; forming a dielectric material in the first and second trenches; forming a semiconductor material in the first and second trenches, the dielectric material in the first trench between the semiconductor material in the first trench and the at least one sidewall of the first trench and the dielectric material in the second trench between the semiconductor material in the second trench and the at least one sidewall of the second trench; and forming a gate structure between the first and second trenches by; forming a third trench in the semiconductor material, the third trench having at least one sidewall and extending from the first surface into the semiconductor material a second distance; forming a gate dielectric in the third trench; and forming a semiconductor material in the third trench, wherein the gate dielectric is between the at least one sidewall of the third trench and the semiconductor material in the third trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a semiconductor component, comprising:
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providing a semiconductor material of a first conductivity type; forming first and second trenches in the semiconductor material; forming first and second field plates in the first and second trenches, respectively; forming a third trench in the semiconductor material, the third trench between the first and second trenches; and forming a first gate structure in the third trench. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A semiconductor component, comprising:
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a semiconductor material of a first conductivity type having a major surface; first and second trenches extending from the major surface into the semiconductor material; first and second field plates in the first and second trenches, respectively; a third trench extending from the major surface into the semiconductor material, the third trench between the first and second trenches; and first gate structure in the third trench. - View Dependent Claims (20, 21)
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Specification