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SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE

  • US 20090108343A1
  • Filed: 10/31/2007
  • Published: 04/30/2009
  • Est. Priority Date: 10/31/2007
  • Status: Abandoned Application
First Claim
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1. A method for manufacturing a semiconductor component, comprising:

  • providing a semiconductor material having first and second opposing surfaces;

    forming first and second trenches in the semiconductor material, wherein the first and second trenches have at least one sidewall and extend from the first surface into the semiconductor material a first distance;

    forming a dielectric material in the first and second trenches;

    forming a semiconductor material in the first and second trenches, the dielectric material in the first trench between the semiconductor material in the first trench and the at least one sidewall of the first trench and the dielectric material in the second trench between the semiconductor material in the second trench and the at least one sidewall of the second trench; and

    forming a gate structure between the first and second trenches by;

    forming a third trench in the semiconductor material, the third trench having at least one sidewall and extending from the first surface into the semiconductor material a second distance;

    forming a gate dielectric in the third trench; and

    forming a semiconductor material in the third trench, wherein the gate dielectric is between the at least one sidewall of the third trench and the semiconductor material in the third trench.

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