BOOTSTRAP CIRCUIT AND STEP-DOWN CONVERTER USING SAME

• US 20090108908A1
• Filed: 10/23/2008
• Published: 04/30/2009
• Est. Priority Date: 10/24/2007
• Status: Abandoned Application

• Current Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Original Assignee: Fuji Electric Device Technology Company Limited (Fuji Electric Systems Company Limited)
• Inventors: YAMADAYA, Masayuki
• Application Number:
  US12/257,315
• Publication Number:
  US 20090108908A1
• Time in Patent Office: Days
• US Class Current: 327/390
• CPC Class Codes: H02M 1/0006 Arrangements for supplying an adequate voltage to the control circuit of converters
• CPC Class Codes: H02M 1/08 Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
• CPC Class Codes: H02M 3/1588 comprising at least one synchronous rectifier element H02M3/1582, H02M3/1584 take precedence
• CPC Class Codes: Y02B 70/10 Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

The invention provides a bootstrap circuit which enables adequate charging of a capacitor used in the bootstrap circuit even during light load or no load conditions, and which does not impede the performance of a step-down converter proper, as well as a step-down converter using the bootstrap circuit. A capacitor charge/discharge path formation mechanism is provided in the bootstrap circuit that enables a terminal of a capacitor used in the bootstrap circuit to be separated and made independent from a step-down converter circuit.

Claims

1. A bootstrap circuit comprising:

a capacitor which steps up a power supply voltage of a driver to an input voltage or higher, in order to perform switching control by applying a voltage from the driver to a gate of a switching device employing an N-channel MOSFET having a drain to which the input voltage is supplied; and

a capacitor charge/discharge path formation mechanism, which forms, independently of a step-down converter circuit, a charge/discharge path for charging the capacitor in synchronization with an off state of the switching device, and for discharging the capacitor in synchronization with an on state of the switching device for application as the power supply voltage to the driver.

2. The bootstrap circuit according to claim 1, wherein the capacitor charge/discharge path formation mechanism includes a first switch, which connects a ground-side terminal of the capacitor to ground in order to form a charge path for the capacitor in synchronization with the off state of the switching device, and a second switch, which connects the ground-side terminal of the capacitor to a source terminal of the switching device in order to form a discharge path for the capacitor in synchronization with the on state of the switching device.

3. The bootstrap circuit according to claim 2, wherein an N-channel MOSFET is used in the first switch, a P-channel MOSFET is used in the second switch, and a drain of the N-channel MOSFET and a drain of the P-channel MOSFET are connected to the ground-side terminal of the capacitor.

4. A step-down converter, using the bootstrap circuit according to any one of claims 1 through 3 in the power supply of a driver which drives a switching device that uses an N-channel MOSFET on the high side.

5. A synchronous rectification-type step-down converter, comprising a synchronous rectification-type step-down converter constituted using the bootstrap circuit according to any one of claims 1 through 3 in the power supply of a driver which drives a switching device that uses an N-channel MOSFET on the high side.

6. A diode rectification-type step-down converter, comprising a diode rectification-type step-down converter constituted using the bootstrap circuit according to any one of claims 1 through 3 in the power supply of a driver which drives a switching device that uses an N-channel MOSFET on the high side.