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MEMORY HAVING CIRCUITRY CONTROLLING THE VOLTAGE DIFFERENTIAL BETWEEN THE WORD LINE AND ARRAY SUPPLY VOLTAGE

  • US 20090109785A1
  • Filed: 10/31/2007
  • Published: 04/30/2009
  • Est. Priority Date: 10/31/2007
  • Status: Active Grant
First Claim
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1. An integrated circuit (IC), comprising:

  • at least one memory array comprising a plurality of memory cells arranged in a plurality of rows and columns, said array also having a plurality of word lines for accessing rows of cells and a plurality bit lines for accessing columns of cells, andvoltage differential generating circuitry operable to provide a differential wordline voltage (VWL) relative to an array supply voltage, wherein said differential is a function of said array supply voltage.

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