METHOD FOR REMOVING OXIDES
First Claim
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1. A deposition method comprising:
- positioning a substrate having an oxide layer into a processing chamber;
generating a plasma of a reactive species from a gas mixture within the processing chamber;
exposing the substrate to the reactive species while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65°
C.;
heating the substrate to a temperature of at least about 75°
C. to vaporize the volatile film and remove the oxide layer; and
depositing a first layer on the substrate after heating the substrate.
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Abstract
A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, generating a plasma of a reactive species from a gas mixture within the processing chamber, exposing the substrate to the reactive species while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to vaporize the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.
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Citations
20 Claims
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1. A deposition method comprising:
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positioning a substrate having an oxide layer into a processing chamber; generating a plasma of a reactive species from a gas mixture within the processing chamber; exposing the substrate to the reactive species while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65°
C.;heating the substrate to a temperature of at least about 75°
C. to vaporize the volatile film and remove the oxide layer; anddepositing a first layer on the substrate after heating the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification