METHODS OF USING THIN METAL LAYERS TO MAKE CARBON NANOTUBE FILMS, LAYERS, FABRICS, RIBBONS, ELEMENTS AND ARTICLES

• US 20090111282A1
• Filed: 01/13/2003
• Published: 04/30/2009
• Est. Priority Date: 01/13/2003
• Status: Active Grant

• Current Assignee: ZEON Corporation
• Original Assignee: Nantero Incorporated
• Inventors: Ward, Jonathan W., Segal, Brent M., Rueckes, Thomas
• Granted Patent: US 7,560,136 B2
• Time in Patent Office: Days
• US Class Current: 438/768
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: C01B 32/16 Preparation
• CPC Class Codes: H01L 21/02115 the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
• CPC Class Codes: H01L 21/3146 Carbon layers, e.g. diamond-like layers
• CPC Class Codes: H01L 29/43 characterised by the materials of which they are formed
• CPC Class Codes: Y10S 977/742 Carbon nanotubes, CNTs
• CPC Class Codes: Y10S 977/75 Single-walled
• CPC Class Codes: Y10S 977/751 with specified chirality and/or electrical conductivity

Abstract

Methods of using thin metal layers to make Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles are disclosed. Carbon nanotube growth catalyst is applied on to a surface of a substrate, including one or more thin layers of metal. The substrate is subjected to a chemical vapor deposition of a carbon-containing gas to grow a non-woven fabric of carbon nanotubes. Portions of the non-woven fabric are selectively removed according to a defined pattern to create the article. A non-woven fabric of carbon nanotubes may be made by applying carbon nanotube growth catalyst on to a surface of a wafer substrate to create a dispersed monolayer of catalyst. The substrate is subjected to a chemical vapor deposition of a carbon-containing gas to grow a non-woven fabric of carbon nanotubes in contact and covering the surface of the wafer and in which the fabric is substantially uniform density.

Claims

1-31. -31. (canceled)

32. A method of making an electrical trace, comprising:

providing a wafer substrate;

applying at least one thin metal film on a surface of the substrate;

subjecting the substrate to a chemical vapor deposition of a carbon-containing gas to catalytically grow a non-woven fabric of carbon nanotubes of unconstrained orientation from the at least one thin metal film, wherein the fabric is substantially parallel to the surface of the wafer, wherein the fabric is of substantially uniform density and wherein the chemical vapor deposition has a run time of about 1-10 minutes; and

providing first and second electrodes in contact with the non-woven fabric of carbon nanotubes, the non-woven fabric of carbon nanotubes forming an electrical trace between the first and second electrodes.

33. The method of claim 32 wherein the nanotubes are single-walled carbon nanotubes.

34. The method of claim 32 wherein the fabric is primarily a monolayer of nanotubes.

35. The method of claim 32 wherein the fabric is about 2 nm or less in thickness.

36. The method of claim 32 wherein the applying of at the least one thin metal film comprises a physical vapor deposition technique.

37. The method of claim 32 wherein the applying of the at least one thin metal film comprises applying at least one of iron, nickel, cobalt and molybdenum with a thinness of about 1-2 nm.

38. The method of claim 32 further comprising applying a co-catalyst.

39. The method of claim 38 wherein the co-catalyst comprises a metal layer comprising at least one of aluminum, molybdenum, and cobalt.

40. The method of claim 32 wherein the applying at least one thin metal film to the substrate comprises applying an aluminum layer the substrate, applying an iron layer to the aluminum layer, and applying a molybdenum layer to the iron layer.

41. The method of claim 40 wherein the aluminum, iron, and molybdenum are applied with a thickness ratio of 15:

1;

2.

42. The method of claim 32 further comprising applying at least one layer of at least one transitional metal catalyst comprising at least one of yttrium, a lanthanide, and an actinide.

43. The method of claim 32 further comprising oxidizing the at least one thin metal film.

44. The method of claim 32 wherein the subjecting the substrate to chemical vapor deposition substantially vaporizes the at least one thin metal film.

45. The method of claim 32 wherein the carbon-containing gas comprises methane.

46. The method of claim 32 wherein the carbon-containing gas comprises ethylene.

47. The method of claim 45 wherein the methane is applied at about 100-750 sccm flow.

48. The method of claim 46 wherein the ethylene is applied at about a 1-5 sccm flow.

49. The method of claim 47 wherein the chemical vapor deposition is at about 850°

C.

50. The method of claim 48 wherein the chemical vapor deposition is at about 800°

C.

52. The method of claim 32 wherein the substrate is a wafer substrate and the applying of the at least one thin metal film substantially covers the wafer substrate.

53. The method of claim 32 wherein the at least one thin metal film is applied according to a predefined pattern to cover only a portion of the substrate.

54. The method of claim 32 wherein the carbon containing gas is applied at a rate that is selected to provide a pre-defined density and a pre-defined electrical resistance of the non-woven fabric.

55. The method of claim 32 wherein the chemical vapor deposition is performed at a temperature that is selected to provide a pre-defined density and a pre-defined electrical resistance of the non-woven fabric.

56. The method of claim 38 wherein the co-catalyst is applied at a thickness that is selected to provide a pre-defined density and a pre-defined electrical resistance of the non-woven fabric.

57. The method of claim 32 wherein the carbon nanotubes of the non-woven fabric include metallic nanotubes and semiconducting nanotubes and wherein the relative composition of metallic and semiconducting nanotubes in the fabric is controlled.

58. The method of claim 32 wherein the carbon nanotubes of the non-woven fabric include metallic nanotubes and semiconducting nanotubes and wherein the method further includes selectively removing metallic nanotubes.

59. The method of claim 32 wherein the carbon nanotubes of the non-woven fabric include metallic nanotubes and semiconducting nanotubes and wherein the method further includes selectively removing semiconducting nanotubes.

60. The method of claim 57 wherein the relative composition of metallic and semiconducting nanotubes in the fabric is controlled during the chemical vapor deposition.

61. The method of claim 32 wherein the subjecting of the substrate to chemical vapor deposition includes exposing the substrate to inert gasses.

62. The method of claim 61 wherein the inert gasses comprise argon and hydrogen.

63. The method of claim 62 wherein the argon and hydrogen are flowed at a controlled rate of 1:

4.

64. The method of claim 32 further comprising applying a distribution of nanoparticles on the at least one thin metal film, wherein the nanoparticles comprise carbon nanotube growth catalyst.

65. The method of claim 40 wherein the aluminum, iron, and molybdenum are applied with respective thicknesses of 15 nm, 1 nm, and 2 nm.

51. (canceled)