ELECTRONIC DEVICE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• US 20090114911A1
• Filed: 12/04/2008
• Published: 05/07/2009
• Est. Priority Date: 02/03/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: KUWABARA, Hideaki, MAEKAWA, Shinji
• Granted Patent: US 8,207,533 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78678 with inverted-type structure, e.g. with bottom gate
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The present invention provides a manufacturing process using a droplet-discharging method that is suitable for manufacturing a large substrate in mass production. A photosensitive material solution of a conductive film is selectively discharged by a droplet-discharging method, selectively exposed to laser light, and developed or etched, thereby allowing only the region exposed to laser light to be left and realizing a source wiring and a drain wiring having a more microscopic pattern than the pattern itself formed by discharging. One feature of the source wiring and the drain wiring is that the source wiring and the drain wiring cross an island-like semiconductor layer and overlap it.

Claims

1. An active matrix display device comprising:

a first thin film transistor formed over a substrate;

a pixel electrode formed over the substrate and electrically connected to the first thin film transistor;

a driver circuit operationally connected to the first thin film transistor, the driver circuit comprising a second thin film transistor,

wherein each of the first thin film transistor and the second thin film transistor comprises a semiconductor layer as an active layer, the semiconductor layer including a metal oxide including at least indium.

2. The active matrix display device according to claim 1, wherein the metal oxide includes zinc, gallium, and indium.

3. The active matrix display device according to claim 1, wherein the first thin film transistor is a top gate thin film transistor.

4. The active matrix display device according to claim 1, wherein the active matrix display device is a liquid crystal display device.

5. The active matrix display device according to claim 1, wherein the active matrix display device is an EL display device.

6. The active matrix display device according to claim 1, wherein the substrate is a plastic substrate.

7. The active matrix display device according to claim 1, wherein the substrate is a glass substrate.

8. An active matrix display device comprising:

a first thin film transistor formed over a substrate;

a pixel electrode formed over the substrate and electrically connected to the first thin film transistor;

a driver circuit operationally connected to the first thin film transistor, the driver circuit comprising a second thin film transistor,

wherein each of the first thin film transistor and the second thin film transistor is a bottom gate type thin film transistor and comprises a semiconductor layer as an active layer including a metal oxide including at least indium.

9. The active matrix display device according to claim 8, wherein the metal oxide includes zinc, gallium, and indium.

10. The active matrix display device according to claim 8, wherein the first thin film transistor is a top gate thin film transistor.

11. The active matrix display device according to claim 8, wherein the active matrix display device is a liquid crystal display device.

12. The active matrix display device according to claim 8, wherein the active matrix display device is an EL display device.

13. The active matrix display device according to claim 8, wherein the substrate is a plastic substrate.

14. The active matrix display device according to claim 8, wherein the substrate is a glass substrate.

15. An active matrix display device comprising:

a first thin film transistor formed over a substrate;

an interlayer insulating film formed over the first thin film transistor;

a pixel electrode formed over the interlayer insulating film and electrically connected to the first thin film transistor;

a driver circuit operationally connected to the first thin film transistor, the driver circuit comprising a second thin film transistor,

wherein each of the first thin film transistor and the second thin film transistor comprises a semiconductor layer as an active layer, the semiconductor layer including a metal oxide including at least indium.

16. The active matrix display device according to claim 15, wherein the metal oxide includes zinc, gallium, and indium.

17. The active matrix display device according to claim 15, wherein the first thin film transistor is a top gate thin film transistor.

18. The active matrix display device according to claim 15, wherein the active matrix display device is a liquid crystal display device.

19. The active matrix display device according to claim 15, wherein the active matrix display device is an EL display device.

20. The active matrix display device according to claim 15, wherein the substrate is a plastic substrate.

21. The active matrix display device according to claim 15, wherein the substrate is a glass substrate.

22. The active matrix display device according to claim 15, further comprising a drain wiring through which the pixel electrode is electrically connected to the first thin film transistor has a meandering portion.

23. An active matrix display device comprising:

a first thin film transistor formed over a substrate;

an interlayer insulating film formed over the first thin film transistor;

a pixel electrode formed over the interlayer insulating film and electrically connected to the first thin film transistor;

a driver circuit operationally connected to the first thin film transistor, the driver circuit comprising a second thin film transistor,

wherein each of the first thin film transistor and the second thin film transistor is a bottom gate type thin film transistor and comprises a semiconductor layer as an active layer including a metal oxide including at least indium.

24. The active matrix display device according to claim 23, wherein the metal oxide includes zinc, gallium, and indium.

25. The active matrix display device according to claim 23, wherein the first thin film transistor is a top gate thin film transistor.

26. The active matrix display device according to claim 23, wherein the active matrix display device is a liquid crystal display device.

27. The active matrix display device according to claim 23, wherein the active matrix display device is an EL display device.

28. The active matrix display device according to claim 23, wherein the substrate is a plastic substrate.

29. The active matrix display device according to claim 23, wherein the substrate is a glass substrate.

30. The active matrix display device according to claim 23, further comprising a drain wiring through which the pixel electrode is electrically connected to the first thin film transistor has a meandering portion.

31. An electronic device having an active matrix display device, the active matrix display device comprising:

a first thin film transistor formed over a substrate;

a pixel electrode formed over the substrate and electrically connected to the first thin film transistor;

a driver circuit operationally connected to the first thin film transistor, the driver circuit comprising a second thin film transistor,

wherein each of the first thin film transistor and the second thin film transistor comprises a semiconductor layer as an active layer, the semiconductor layer including a metal oxide including at least indium.

32. The electronic device according to claim 31, wherein the metal oxide includes zinc, gallium, and indium.

33. The electronic device according to claim 31, wherein the first thin film transistor is a top gate thin film transistor.

34. The electronic device according to claim 31, wherein the active matrix display device is a liquid crystal display device.

35. The electronic device according to claim 31, wherein the active matrix display device is an EL display device.

36. The electronic device according to claim 31, wherein the substrate is a plastic substrate.

37. The electronic device according to claim 31, wherein the substrate is a glass substrate.

38. The electronic device according to claim 31, wherein the electronic device is a computer.

39. The electronic device according to claim 31, wherein the electronic device is a television.

40. The electronic device according to claim 31, wherein the electronic device is for advertisement.

41. An electronic device having an active matrix display device, the active matrix display device comprising:

a first thin film transistor formed over a substrate;

a pixel electrode formed over the substrate and electrically connected to the first thin film transistor;

a driver circuit operationally connected to the first thin film transistor, the driver circuit comprising a second thin film transistor,

wherein each of the first thin film transistor and the second thin film transistor is a bottom gate type thin film transistor and comprises a semiconductor layer as an active layer including a metal oxide including at least indium.

42. The electronic device according to claim 41, wherein the metal oxide includes zinc, gallium, and indium.

43. The electronic device according to claim 41, wherein the first thin film transistor is a top gate thin film transistor.

44. The electronic device according to claim 41, wherein the active matrix display device is a liquid crystal display device.

45. The electronic device according to claim 41, wherein the active matrix display device is an EL display device.

46. The electronic device according to claim 41, wherein the substrate is a plastic substrate.

47. The electronic device according to claim 41, wherein the substrate is a glass substrate.

48. The electronic device according to claim 41, wherein the electronic device is a computer.

49. The electronic device according to claim 41, wherein the electronic device is a television.

50. The electronic device according to claim 41, wherein the electronic device is for advertisement.