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Integrated Circuit Embedded With Non-Volatile One-Time-Programmable And Multiple-Time Programmable Memory

  • US 20090114972A1
  • Filed: 11/03/2008
  • Published: 05/07/2009
  • Est. Priority Date: 11/01/2007
  • Status: Active Grant
First Claim
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1. A programmable non-volatile device situated on a substrate comprising:

  • a floating gate;

    wherein said floating gate is comprised of a material that is also used as a gate for a transistor device also situated on the substrate and associated with a logic gate and/or a volatile memory;

    a source region; and

    a drain region; and

    an n-type channel coupling said source region and drain region;

    wherein the drain region overlaps a sufficient portion of said gate such that a programming voltage for the device applied to said drain can be imparted to said floating gate through capacitive coupling.

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