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Semiconductor apparatus and method for manufacturing the same

  • US 20090114985A1
  • Filed: 11/04/2008
  • Published: 05/07/2009
  • Est. Priority Date: 11/06/2007
  • Status: Active Grant
First Claim
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1. A semiconductor apparatus comprising:

  • a semiconductor substrate that has a first surface and a second surface opposite to each other, and that has a plurality of element forming regions;

    an insulation trench that surrounds each of the plurality of element forming regions, and that insulates and separates the plurality of element forming regions from each other; and

    a plurality of elements that is respectively located in the plurality of element forming regions, wherein the plurality of elements includes at least two double-sided electrode elements, wherein each double-sided electrode element includes;

    a first electrode that is located on one of the first surface and the second surface of the semiconductor substrate;

    a second electrode that is located on the other of the first surface and the second surface of the semiconductor substrate, wherein the double-sided electrode element is configured so that a current flows between the first electrode and the second electrode;

    a PN column region that is located in the semiconductor substrate, and that includes a plurality of P conductivity type semiconductor parts and a plurality of N conductivity type semiconductor parts, wherein the plurality of P conductivity type semiconductor parts and the plurality of N conductivity type semiconductor parts are alternately and adjacently arranged in a direction perpendicular to a thickness direction of the semiconductor substrate; and

    a drift region that is provided by one of;

    the plurality of P conductivity type semiconductor parts; and

    the plurality of N conductivity type semiconductor parts of the PN column region.

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