Semiconductor apparatus and method for manufacturing the same
First Claim
1. A semiconductor apparatus comprising:
- a semiconductor substrate that has a first surface and a second surface opposite to each other, and that has a plurality of element forming regions;
an insulation trench that surrounds each of the plurality of element forming regions, and that insulates and separates the plurality of element forming regions from each other; and
a plurality of elements that is respectively located in the plurality of element forming regions, wherein the plurality of elements includes at least two double-sided electrode elements, wherein each double-sided electrode element includes;
a first electrode that is located on one of the first surface and the second surface of the semiconductor substrate;
a second electrode that is located on the other of the first surface and the second surface of the semiconductor substrate, wherein the double-sided electrode element is configured so that a current flows between the first electrode and the second electrode;
a PN column region that is located in the semiconductor substrate, and that includes a plurality of P conductivity type semiconductor parts and a plurality of N conductivity type semiconductor parts, wherein the plurality of P conductivity type semiconductor parts and the plurality of N conductivity type semiconductor parts are alternately and adjacently arranged in a direction perpendicular to a thickness direction of the semiconductor substrate; and
a drift region that is provided by one of;
the plurality of P conductivity type semiconductor parts; and
the plurality of N conductivity type semiconductor parts of the PN column region.
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Accused Products
Abstract
A semiconductor apparatus is disclosed. The semiconductor apparatus includes a semiconductor substrate that has a first surface and a second surface opposite to each other. The semiconductor apparatus further includes multiple double-sided electrode elements each having a pair of electrodes located respectively on the first and second surfaces of the semiconductor substrate. A current flows between the first and second electrode. Each double-sided electrode element has a PN column region located in the semiconductor substrate. The semiconductor apparatus further includes an insulation trench that surrounds each of multiple double-sided electrode elements, and that insulates and separates the multiple double-sided electrode elements from each other.
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Citations
26 Claims
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1. A semiconductor apparatus comprising:
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a semiconductor substrate that has a first surface and a second surface opposite to each other, and that has a plurality of element forming regions; an insulation trench that surrounds each of the plurality of element forming regions, and that insulates and separates the plurality of element forming regions from each other; and a plurality of elements that is respectively located in the plurality of element forming regions, wherein the plurality of elements includes at least two double-sided electrode elements, wherein each double-sided electrode element includes; a first electrode that is located on one of the first surface and the second surface of the semiconductor substrate; a second electrode that is located on the other of the first surface and the second surface of the semiconductor substrate, wherein the double-sided electrode element is configured so that a current flows between the first electrode and the second electrode; a PN column region that is located in the semiconductor substrate, and that includes a plurality of P conductivity type semiconductor parts and a plurality of N conductivity type semiconductor parts, wherein the plurality of P conductivity type semiconductor parts and the plurality of N conductivity type semiconductor parts are alternately and adjacently arranged in a direction perpendicular to a thickness direction of the semiconductor substrate; and a drift region that is provided by one of;
the plurality of P conductivity type semiconductor parts; and
the plurality of N conductivity type semiconductor parts of the PN column region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A method for manufacturing a semiconductor apparatus, the method comprising:
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preparing a semiconductor substrate that has a first surface and a second surface opposite to each other, wherein the semiconductor substrate includes a PN column region, wherein the PN column region has a plurality of P conductivity type semiconductor parts and a plurality of N conductivity type semiconductor parts, wherein the plurality of P conductivity type semiconductor parts and the plurality of N conductivity type semiconductor parts are alternately and adjacently arranged to each other in a direction perpendicular to a thickness direction of the semiconductor substrate; forming an insulation trench on the semiconductor substrate from a first surface side of the semiconductor substrate, so that the insulation trench has an open end on the first surface side and a bottom in the semiconductor substrate, wherein the insulation trench defines a plurality of element forming regions, wherein the insulation trench separates and insulates the plurality of element forming regions from each other, wherein the insulation trench is formed so that each element forming region has the PN column region with plurality of P conductivity type semiconductor parts and the plurality of N conductivity type semiconductor parts; forming parts of a double-sided electrode element on the first surface side of each element forming region of the semiconductor substrate, wherein the parts of the double-sided electrode element include a first electrode; after the forming of the insulation trench, and after the forming of the parts of the double-sided electrode element on the first surface side, thinning the semiconductor substrate by removing a second surface potion of the semiconductor substrate, so that the insulation trench is exposed from a second surface side of the semiconductor substrate; and after the thinning of the semiconductor substrate, forming other parts of the double-sided electrode element on the second surface side of each element forming region, wherein the other parts include a second electrode opposed to the first electrode, wherein the double-sided electrode element is formed so that a current flows between the first electrode and the second electrode. - View Dependent Claims (23)
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24. A method for manufacturing a semiconductor apparatus, the method comprising:
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preparing a semiconductor substrate that includes a first surface and a second surface opposite to each other, wherein the semiconductor substrate further includes a PN column region, wherein the PN column region has a plurality of P conductivity type semiconductor parts and a plurality of N conductivity type semiconductor parts, wherein the plurality of P conductivity type semiconductor parts and the plurality of N conductivity type semiconductor parts are alternately and adjacently arranged to each other in a direction perpendicular to a thickness direction of the semiconductor substrate, wherein the semiconductor substrate has a plurality of element forming regions; forming parts of a double-sided electrode element on a first surface side of each element forming region of the semiconductor substrate, wherein the parts of the double-sided electrode element include a first electrode; forming a first surface side insulation film on the first surface side of the semiconductor substrate; after the forming of the parts of the double-sided electrode element on the first surface side, and after the forming of the first surface side insulation film, forming an insulation trench from a second surface side of the semiconductor substrate, so that the insulation trench reach the first surface side insulation film, wherein the insulation trench separates and insulates the plurality of element forming regions from each other, wherein the insulation trench surrounds each of the plurality of element forming regions, wherein the insulation trench is formed so that each element forming region includes the plurality of P conductivity type semiconductor parts and the plurality of N conductivity type semiconductor parts; and after the forming of the parts of the double-sided electrode element on the first surface side, forming other parts of the double-sided electrode element on the second surface side of each element forming region of the semiconductor substrate, wherein the other parts include a second electrode opposed to the first electrode, wherein the double-sided electrode element is formed so that a current flows between the first electrode and the second electrode. - View Dependent Claims (25, 26)
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Specification