FIELD PLATE TRENCH TRANSISTOR AND METHOD FOR PRODUCING IT
First Claim
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1. A field plate trench transistor having a semiconductor body comprising:
- a trench structure;
an electrode structure embedded in the trench structure, the electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure arranged below and/or alongside the gate electrode structure and electrically insulated from the latter; and
a voltage divider provided in the semiconductor body, the voltage divider being integrated into the field electrode structure or provided within the mesa zones (adjoining trenches containing field plates), the voltage divider being configured such that the field electrode structure is set to a potential lying between source and drain potentials and/or gate and drain potentials.
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Abstract
A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.
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Citations
9 Claims
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1. A field plate trench transistor having a semiconductor body comprising:
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a trench structure; an electrode structure embedded in the trench structure, the electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure arranged below and/or alongside the gate electrode structure and electrically insulated from the latter; and a voltage divider provided in the semiconductor body, the voltage divider being integrated into the field electrode structure or provided within the mesa zones (adjoining trenches containing field plates), the voltage divider being configured such that the field electrode structure is set to a potential lying between source and drain potentials and/or gate and drain potentials. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A field plate trench transistor having a semiconductor body comprising:
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a trench structure; means for providing an electrode structure embedded in the trench structure, the electrode structure being electrically insulated from the semiconductor body by an insulation structure means and having a gate electrode structure and a field electrode structure arranged below and/or alongside the gate electrode structure and electrically insulated from the latter; and means for providing a voltage divider in the semiconductor body, the voltage divider means being integrated into the field electrode structure or provided within the mesa zones (adjoining trenches containing field plates), the voltage divider means being configured such that the field electrode structure is set to a potential lying between source and drain potentials and/or gate and drain potentials, wherein the field electrode structure is divided into a plurality of field electrode regions arranged vertically one above another and the voltage divider is divided into a plurality of voltage divider regions, each voltage divider region being electrically connected to a field electrode region or integrated into the latter, so that at least two different field electrode regions are at different potentials.
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Specification