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FIELD PLATE TRENCH TRANSISTOR AND METHOD FOR PRODUCING IT

  • US 20090114986A1
  • Filed: 01/07/2009
  • Published: 05/07/2009
  • Est. Priority Date: 08/31/2005
  • Status: Active Grant
First Claim
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1. A field plate trench transistor having a semiconductor body comprising:

  • a trench structure;

    an electrode structure embedded in the trench structure, the electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure arranged below and/or alongside the gate electrode structure and electrically insulated from the latter; and

    a voltage divider provided in the semiconductor body, the voltage divider being integrated into the field electrode structure or provided within the mesa zones (adjoining trenches containing field plates), the voltage divider being configured such that the field electrode structure is set to a potential lying between source and drain potentials and/or gate and drain potentials.

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