METHOD FOR TREATING SUBSTRATE AND RECORDING MEDIUM

• US 20090117270A1
• Filed: 07/25/2006
• Published: 05/07/2009
• Est. Priority Date: 09/26/2005
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Nakamura, Kazuhito, Kawano, Yumiko, Yamasaki, Hideaki
• Application Number:
  US12/088,153
• Publication Number:
  US 20090117270A1
• Time in Patent Office: Days
• US Class Current: 427/248.100
• CPC Class Codes: C23C 16/0227 by cleaning or etching
• CPC Class Codes: C23C 16/16 from metal carbonyl compounds
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases

Abstract

A method for processing a substrate includes a film forming step of supplying a film forming gas into the processing chamber to form a film on the substrate, a cleaning step of supplying a plasma-exited cleaning gas into the processing chamber after the film forming step to clean the inside of the processing chamber, and a coating step of forming a coating within the processing chamber after the cleaning step. The cleaning step includes a high pressure cleaning of regulating the pressure in the processing chamber so that cleaning is mainly performed by molecules formed by recombining radicals in the cleaning gas, and the coating step includes a low temperature film forming step of forming the coating film under the condition that the temperature of a substrate supporting table is set lower than that in the film formation on the substrate during the film formation step.

Claims

1. A substrate processing method performed by a film forming apparatus including a substrate supporting table, for supporting a substrate to be processed, and having a heating unit therein, and a processing chamber in which the substrate supporting table is provided, the method comprising:

a film forming step for forming a film on the substrate by supplying a film forming gas into the processing chamber;

a cleaning step for cleaning the inside of the processing chamber by supplying a plasma-excited cleaning gas into the processing chamber after the film forming step; and

a coating step for forming a coating film in the processing chamber after the cleaning step,

wherein the cleaning step includes a high pressure cleaning where a pressure in the processing chamber is controlled such that the inside of the processing chamber is cleaned mainly by molecules formed by recombining radicals in the plasma-excited cleaning gas, and the coating step includes a low temperature film forming where the coating film is formed under the condition that the temperature of the substrate supporting table is set lower than that in the film formation on the substrate during the film forming step.

2. The method of claim 1, wherein the cleaning gas is formed of NF₃, and the film formed in the film forming step includes W.

3. The method of claim 2, wherein, in the high pressure cleaning, the pressure in the processing chamber is set to be 20 Torr or more.

4. The method of claim 3, wherein, in the high pressure cleaning, the temperature of the substrate supporting table is set to be 350°

C. or more.

5. The method of claim 2, wherein the cleaning step includes a low pressure cleaning where the inside of the processing chamber is cleaned under the condition that the pressure in the processing chamber is set lower than that in the high pressure cleaning.

6. The method of claim 5, wherein, in the low pressure cleaning, the pressure in the processing chamber is set to be 10 Torr or less.

7. The method of claim 6, wherein, in the low pressure cleaning, the temperature of the substrate supporting table is set to be 300°

C. or less.

8. The method of claim 5, wherein, in the low pressure cleaning, the temperature of the substrate supporting table is set lower than that in the high pressure cleaning.

9. The method of claim 5, wherein, in the cleaning step, the high pressure cleaning is performed after the low pressure cleaning.

10. The method of claim 1, wherein, in the low temperature film forming, the temperature of the substrate supporting table is set to be 430°

C. or less.

11. The method of claim 1, wherein the coating step further includes a high temperature film forming where the coating film is formed in the processing chamber under the condition that the temperature of the substrate supporting table is set higher than that in the low temperature film forming.

12. The method of claim 11, wherein, in the coating step, the high temperature film forming is performed after the low temperature film forming.

13. The method of claim 1, further comprising a purge step for purging the processing chamber by using an inert gas, between the cleaning step and the coating step.

14. A storage medium storing a program executing a substrate processing method performed by a film forming apparatus on a computer, the apparatus including a substrate supporting table, for supporting a substrate to be processed, having a heating unit therein, and a processing chamber in which the substrate supporting table is provided, the method comprising:

a film forming step for forming a film on the substrate by supplying a film forming gas into the processing chamber;

a cleaning step for cleaning the inner space of the processing chamber by supplying a plasma-excited cleaning gas into the processing chamber after the film forming step; and

a coating step for forming a coating film in the processing chamber,

wherein the cleaning step includes a high pressure cleaning where a pressure in the processing chamber is controlled such that the inside of the processing chamber is cleaned mainly by molecules formed by recombining radicals in the plasma-excited cleaning gas, and the coating step includes a low temperature film forming where the coating film is formed under the condition that the temperature of the substrate supporting table is set lower than that in the film formation on the substrate during the film forming step.