Layer Depositing Device and Method for Operating it

• US 20090117272A1
• Filed: 09/29/2008
• Published: 05/07/2009
• Est. Priority Date: 09/28/2007
• Status: Active Grant

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: BEHRES, Alexander
• Granted Patent: US 9,080,237 B2
• Time in Patent Office: Days
• US Class Current: 427/255.500
• CPC Class Codes: C23C 14/505 for rotation of the substrates
• CPC Class Codes: C23C 16/301 AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
• CPC Class Codes: C23C 16/306 AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
• CPC Class Codes: C23C 16/4584 the substrate being rotated
• CPC Class Codes: C30B 25/08 Reaction chambers; Selection of materials therefor
• CPC Class Codes: C30B 25/12 Substrate holders or susceptors
• CPC Class Codes: C30B 25/14 Feed and outlet means for the gases; Modifying the flow of the reactive gases

Abstract

A layer depositing device comprises a chamber (10) having a substrate carrier (12) for receiving at least one substrate (13) to be coated, and a process gas space (11), comprising a partition (23) that separates a first segment (21) of the process gas space (11) from a second segment (22) of the process gas space (11). The layer depositing device has a device (44) for moving the substrate (13) relative to the partition (23).

Claims

1. A layer depositing device comprising:

a chamber having

a substrate carrier for receiving at least one substrate to be coated, and

a process gas space, comprising a partition that separates a first segment of the process gas space from a second segment of the process gas space; and

a device for moving the at least one substrate relative to the partition.

2. The layer depositing device as claimed in claim 1, wherein the chamber comprises:

a first gas feed into the first segment; and

a second gas feed into the second segment.

3. The layer depositing device as claimed in claim 2, wherein the process gas space comprises at least one further segment and at least one further partition and the chamber has at least one further gas feed into the at least one further segment.

4. The layer depositing device as claimed in claim 1, wherein the layer depositing device is embodied as an epitaxial layer depositing device.

5. The layer depositing device as claimed in claim 1, wherein the substrate carrier is embodied as a circular plate.

6. The layer depositing device as claimed in claim 5, wherein the substrate carrier is arranged such that it can be rotated relative to the process gas space about an axis that is the axis of rotational symmetry of the circular plate.

7. The layer depositing device as claimed in claim 1, wherein the device for moving the at least one substrate relative to the partition comprises a motor in such a way that the substrate is arranged in the first segment in a first operating state and in the second segment in a second operating state.

8. The layer depositing device as claimed in claim 1, wherein the at least one partition is at a distance D1 from the substrate carrier.

9. The layer depositing device as claimed in claim 8, wherein the distance D1 has a value of less than 5 mm.

10. The layer depositing device as claimed in claim 1, wherein at least one of the gas feeds comprises a gas distribution device having a plurality of outlets for distributing a process gas in the corresponding segment.

11. The layer depositing device as claimed in claim 1, comprising a pre-decomposition stage for decomposing a process gas.

12. The layer depositing device as claimed in claim 11, wherein the pre-decomposition stage is embodied as a pyrolysis device).

13. The layer depositing device as claimed in claim 11, wherein the pre-decomposition stage is embodied as a device for generating a plasma.

14. The layer depositing device as claimed claim 1, wherein the chamber comprises a rotating device for rotating the substrate relative to the substrate carrier.

15. A method for operating a layer depositing device, comprising the steps of:

arranging at least one substrate to be coated on a substrate carrier;

setting first process conditions in a first segment of a process gas space and setting second process conditions in a second segment of the process gas space, wherein a partition separates the first segment from the second segment; and

moving the at least one substrate relative to the partition.

16. The method as claimed in claim 15, wherein setting the first process conditions comprises feeding a first process gas into the first segment and setting the second process conditions comprises feeding a second process gas into the second segment.