Method for Producing Group 3-5 Nitride Semiconductor and Method for Producing Light-Emitting Device
First Claim
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1. A method for producing a group 3-5 nitride semiconductor, comprising the steps of (i), (ii), (iii) and (iv) in this order:
- (i) placing inorganic particles on a substrate,(ii) growing a semiconductor layer, and(iii) separating the substrate and the semiconductor layer by irradiating the interface between the substrate and the semiconductor layer with light.
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Abstract
The present invention provides a method for producing a group 3-5 nitride semiconductor and a method for producing a light emitting device. The method for producing a group 3-5 nitride semiconductor, comprises the steps of (i), (ii), (iii) and (iv) in this order: (i) placing inorganic particles on a substrate, (ii) growing a semiconductor layer, and (iii) separating the substrate and the semiconductor layer by irradiating the interface between the substrate and the semiconductor layer with light.
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Citations
17 Claims
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1. A method for producing a group 3-5 nitride semiconductor, comprising the steps of (i), (ii), (iii) and (iv) in this order:
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(i) placing inorganic particles on a substrate, (ii) growing a semiconductor layer, and (iii) separating the substrate and the semiconductor layer by irradiating the interface between the substrate and the semiconductor layer with light. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method for producing a light emitting device, comprising the steps of (i), (ii), (iii) and (iv) in this order:
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(i) placing inorganic particles on a substrate, (ii) growing a semiconductor layer, (iii) separating the substrate and the semiconductor layer by irradiating the interface between the substrate and the semiconductor layer with light, and (iv) forming electrodes. - View Dependent Claims (17)
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