Method for Producing Group 3-5 Nitride Semiconductor and Method for Producing Light-Emitting Device

• US 20090117675A1
• Filed: 09/27/2006
• Published: 05/07/2009
• Est. Priority Date: 09/29/2005
• Status: Active Grant

• Current Assignee: Sumitomo Chemical Company Limited
• Original Assignee: Sumitomo Chemical Company Limited
• Inventors: Yamanaka, Sadanori, Tsuchida, Yoshihiko, Ueda, Kazumasa
• Granted Patent: US 8,691,674 B2
• Time in Patent Office: Days
• US Class Current: 438/22
• CPC Class Codes: C23C 16/01 on temporary substrates, e.g. substrates subsequently removed by etching
• CPC Class Codes: C23C 16/301 AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
• CPC Class Codes: C30B 25/183 being provided with a buffer layer, e.g. a lattice matching layer
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: C30B 33/00 After-treatment of single crystals or homogeneous polycrystalline material with defined structure C30B31/00 takes precedence
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02389 Nitrides
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02513 Microstructure
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02642 Mask materials other than SiO2 or SiN
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate

Abstract

The present invention provides a method for producing a group 3-5 nitride semiconductor and a method for producing a light emitting device. The method for producing a group 3-5 nitride semiconductor, comprises the steps of (i), (ii), (iii) and (iv) in this order: (i) placing inorganic particles on a substrate, (ii) growing a semiconductor layer, and (iii) separating the substrate and the semiconductor layer by irradiating the interface between the substrate and the semiconductor layer with light.

Claims

1. A method for producing a group 3-5 nitride semiconductor, comprising the steps of (i), (ii), (iii) and (iv) in this order:

(i) placing inorganic particles on a substrate,

(ii) growing a semiconductor layer, and

(iii) separating the substrate and the semiconductor layer by irradiating the interface between the substrate and the semiconductor layer with light.

2. The method according to claim 1, wherein the substrate used at the step (i) includes at least one selected from sapphire, SiC, Si, MgAl₂O₄, LiTaO₃, ZrB₂, CrB₂, GaN, and AlN.

3. The method according to claim 1, wherein the substrate used at the step (i) is transparent.

4. The method according to claim 3, wherein the substrate includes at least one selected from sapphire, GaN, and AlN.

5. The method according to claim 1, wherein the inorganic particles includes at least one selected from the group consisting of oxide, nitride, carbide, boride, sulfide, selenide, and metal.

6. The method according to claim 5, wherein the oxide includes at least one selected from the group consisting of silica, alumina, zirconia, titania, ceria, zinc oxide, tin oxide, and yttrium aluminum garnet.

7. The method according to claim 6, wherein the oxide is silica.

8. The method according to claim 1, wherein the inorganic particles have the shape of sphere, plate, needle, or no definite shape.

9. The method according to claim 8, wherein the inorganic particles have the shape of sphere.

10. The method according to claim 9, wherein the inorganic particles has an average particle diameter of from 5 nm to 50 μ

m.

11. The method according to claim 1, wherein the semiconductor layer used at the step (ii) includes a group 3-5 nitride.

12. The method according to claim 11, wherein the step (ii) further comprising the substeps of growing an n-type layer, growing an active layer, and growing a p-type layer.

13. The method according to claim 1, wherein the growth is carried out by metalorganic vapor phase epitaxy, molecular beam epitaxy, or hydride vapor phase epitaxy.

14. The method according to claim 1, wherein the light is a laser light.

15. The method according to claim 1, wherein the light is further irradiated to the inorganic particles.

16. A method for producing a light emitting device, comprising the steps of (i), (ii), (iii) and (iv) in this order:

(i) placing inorganic particles on a substrate,

(ii) growing a semiconductor layer,

(iii) separating the substrate and the semiconductor layer by irradiating the interface between the substrate and the semiconductor layer with light, and

(iv) forming electrodes.

17. The method according to claim 16, wherein the step (ii) comprises the substeps of growing an n-type layer, growing an active layer, and growing a p-type layer.