SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
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1. A method for manufacturing a semiconductor device comprising a chip having a photo sensor element and an amplifier circuit comprising the steps of:
- forming a thin film transistor in the amplifier circuit;
forming an interlayer insulating film over the thin film transistor;
forming a first electrode over the interlayer insulating film at the same time as forming a source or drain electrode connected to a source or drain region of the thin film transistor;
forming the photo sensor element by laminating a first conductive crystalline semiconductor film, an amorphous semiconductor film, and a second conductive crystalline semiconductor film over the first electrode and the interlayer insulating film;
forming a second electrode over the second conductive crystalline semiconductor film; and
etching the first conductive crystalline semiconductor film, the amorphous semiconductor film, and the second conductive crystalline semiconductor film in a self-aligning manner using the second electrode as a mask.
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Abstract
The object of the present invention is to miniaturize the area occupied by the element and to integrate a plenty of elements in a limited area so that the sensor element can have higher output and smaller size.
In the present invention, higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. According to the present invention, the sensor element that can resist the bending stress can be obtained.
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Citations
31 Claims
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1. A method for manufacturing a semiconductor device comprising a chip having a photo sensor element and an amplifier circuit comprising the steps of:
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forming a thin film transistor in the amplifier circuit; forming an interlayer insulating film over the thin film transistor; forming a first electrode over the interlayer insulating film at the same time as forming a source or drain electrode connected to a source or drain region of the thin film transistor; forming the photo sensor element by laminating a first conductive crystalline semiconductor film, an amorphous semiconductor film, and a second conductive crystalline semiconductor film over the first electrode and the interlayer insulating film; forming a second electrode over the second conductive crystalline semiconductor film; and etching the first conductive crystalline semiconductor film, the amorphous semiconductor film, and the second conductive crystalline semiconductor film in a self-aligning manner using the second electrode as a mask. - View Dependent Claims (6, 7, 8, 9)
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2. A method for manufacturing a semiconductor device comprising a chip having a photo sensor element and an amplifier circuit comprising the steps of:
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forming a thin film transistor in the amplifier circuit; forming an interlayer insulating film over the thin film transistor; forming a first electrode over the interlayer insulating film at the same time as forming a source or drain electrode connected to a source or drain region of the thin film transistor; forming the photo sensor element by laminating a first conductive crystalline semiconductor film, an amorphous semiconductor film, and a second conductive crystalline semiconductor film over the first electrode and the interlayer insulating film; and forming a second electrode over the second conductive crystalline semiconductor film, wherein an end portion of the first electrode is covered with the first conductive crystalline semiconductor film. - View Dependent Claims (10, 11, 12, 13)
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3. A method for manufacturing a semiconductor device comprising a chip having a photo sensor element and an amplifier circuit comprising the steps of:
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forming a thin film transistor in the amplifier circuit over a first substrate; forming an interlayer insulating film over the thin film transistor; forming a first electrode over the interlayer insulating film at the same time as forming a source or drain electrode connected to a source or drain region of the thin film transistor; forming the photo sensor element by laminating a first conductive crystalline semiconductor film, an amorphous semiconductor film, and a second conductive crystalline semiconductor film over the first electrode and the interlayer insulating film; forming a second electrode over the second conductive crystalline semiconductor film; etching the first conductive crystalline semiconductor film, the amorphous semiconductor film, and the second conductive crystalline semiconductor film in a self-aligning manner using the second electrode as a mask; separating a layer including the photo sensor element and the amplifier circuit from the first substrate; and transferring the layer including the photo sensor element and the amplifier circuit to a second substrate. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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4. A method for manufacturing a semiconductor device comprising a chip having a photo sensor element and an amplifier circuit comprising the steps of:
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forming a thin film transistor in the amplifier circuit over a first substrate; forming an interlayer insulating film over the thin film transistor; forming a first electrode over the interlayer insulating film at the same time as forming a source or drain electrode connected to a source or drain region of the thin film transistor; forming the photo sensor element by laminating a first conductive crystalline semiconductor film, an amorphous semiconductor film, and a second conductive crystalline semiconductor film over the first electrode and the interlayer insulating film; forming a second electrode over the second conductive crystalline semiconductor film; separating a layer including the photo sensor element and the amplifier circuit from the first substrate; and transferring the layer including the photo sensor element and the amplifier circuit to a second substrate, wherein an end portion of the first electrode is covered with the first conductive crystalline semiconductor film. - View Dependent Claims (20, 21, 22, 23, 24, 25)
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5. A method for manufacturing a semiconductor device comprising a chip having a photo sensor element and an amplifier circuit comprising the steps of:
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forming a thin film transistor in the amplifier circuit over a first substrate; forming an interlayer insulating film over the thin film transistor; forming a first electrode over the interlayer insulating film; forming the photo sensor element by laminating a first conductive crystalline semiconductor film, an amorphous semiconductor film, and a second conductive crystalline semiconductor film over the first electrode and the interlayer insulating film; forming a second electrode over the second conductive crystalline semiconductor film; separating a layer including the photo sensor element and the amplifier circuit from the first substrate; and transferring the layer including the photo sensor element and the amplifier circuit to a second substrate, wherein an end portion of the first electrode is covered with the first conductive crystalline semiconductor film, and wherein a material of the first electrode is the same as a material of a source or drain electrode connected to a source or drain region of the thin film transistor. - View Dependent Claims (26, 27, 28, 29, 30, 31)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsMatsuzaki, Takanori, Morisue, Masafumi, Okazaki, Susumu, Takayama, Toru, Maruyama, Junya, Sugiyama, Eiji, Koyama, Jun, Nishi, Kazuo, Osada, Takeshi, Watanabe, Ryosuke
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current438/59
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CPC Class CodesH01L 2224/16225 the item being non-metallic...H01L 27/1214 comprising a plurality of T...H01L 27/1218 with a particular compositi...H01L 27/1266 the substrate on which the ...H01L 27/14609 Pixel-elements with integra...H01L 27/14665 Imagers using a photoconduc...
