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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20090117681A1
  • Filed: 01/06/2009
  • Published: 05/07/2009
  • Est. Priority Date: 10/06/2003
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device comprising a chip having a photo sensor element and an amplifier circuit comprising the steps of:

  • forming a thin film transistor in the amplifier circuit;

    forming an interlayer insulating film over the thin film transistor;

    forming a first electrode over the interlayer insulating film at the same time as forming a source or drain electrode connected to a source or drain region of the thin film transistor;

    forming the photo sensor element by laminating a first conductive crystalline semiconductor film, an amorphous semiconductor film, and a second conductive crystalline semiconductor film over the first electrode and the interlayer insulating film;

    forming a second electrode over the second conductive crystalline semiconductor film; and

    etching the first conductive crystalline semiconductor film, the amorphous semiconductor film, and the second conductive crystalline semiconductor film in a self-aligning manner using the second electrode as a mask.

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