Electrostatic Discharge (ESD) Protection Structure
First Claim
1. A method of making a semiconductor device, comprising:
- providing a substrate having a plurality of active devices formed thereon;
forming a contact pad on the substrate;
forming a solder bump on the contact pad of the substrate;
forming an electrostatic discharge (ESD) bump electrode on the contact pad of the substrate having a height H ranging from 65 to 85 micrometers with a variation of +/−
10 micrometers, the ESD bump electrode having a tip; and
providing a chip carrier substrate having a contact pad metallurgically connected to the solder bump, the chip carrier substrate further including a ground plate, wherein the tip of the ESD bump electrode is separated from the ground plate by a distance D which is exposed to atmosphere and selected as a ratio of discharging threshold voltage for the active devices to discharging voltage of the atmosphere;
wherein the ESD bump electrode, atmosphere, and ground plate respectively constitute a metal-insulator-metal capacitor having an electric field determined by the distance D which is less than electrostatic energy induced on the contact pad for discharging the electrostatic energy to protect the active devices.
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Accused Products
Abstract
A semiconductor device has a substrate with a plurality of active devices formed thereon. A contact pad is formed on the substrate. A solder bump is formed on the contact pad. An electrostatic discharge (ESD) bump electrode is formed on the contact pad. The ESD bump electrode has a tip. The ESD bump electrode is made with gold. A chip carrier substrate has a contact pad metallurgically connected to the solder bump. The chip carrier substrate also has a ground plate. The ground plate is a low impedance ground point. The tip of the ESD bump electrode is separated from the ground plate by a distance according to ESD sensitivity of the active devices. The distance is determined by a ratio of a discharging threshold voltage for ESD sensitivity of the active device to be protected to an atmosphere discharging voltage.
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Citations
32 Claims
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1. A method of making a semiconductor device, comprising:
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providing a substrate having a plurality of active devices formed thereon; forming a contact pad on the substrate; forming a solder bump on the contact pad of the substrate; forming an electrostatic discharge (ESD) bump electrode on the contact pad of the substrate having a height H ranging from 65 to 85 micrometers with a variation of +/−
10 micrometers, the ESD bump electrode having a tip; andproviding a chip carrier substrate having a contact pad metallurgically connected to the solder bump, the chip carrier substrate further including a ground plate, wherein the tip of the ESD bump electrode is separated from the ground plate by a distance D which is exposed to atmosphere and selected as a ratio of discharging threshold voltage for the active devices to discharging voltage of the atmosphere; wherein the ESD bump electrode, atmosphere, and ground plate respectively constitute a metal-insulator-metal capacitor having an electric field determined by the distance D which is less than electrostatic energy induced on the contact pad for discharging the electrostatic energy to protect the active devices. - View Dependent Claims (2, 5, 27, 28)
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3-4. -4. (canceled)
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6. A method of making a semiconductor device, comprising:
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providing a substrate having a plurality of active devices formed thereon; forming a contact pad on the substrate; forming a solder bump on the contact pad of the substrate; forming an electrostatic discharge (ESD) bump electrode on the contact pad of the substrate having a height H; and providing a chip carrier substrate having a contact pad connected to the solder bump, the chip carrier substrate further including a ground plate, wherein the ESD bump electrode is separated from the ground plate by a distance D which is exposed to atmosphere and selected as a ratio of discharging threshold voltage for the active devices to discharging voltage of the atmosphere; wherein the ESD bump electrode, atmosphere, and ground plate respectively constitute a metal-insulator-metal capacitor having an electric field determined by the distance D which is less than electrostatic energy induced on the contact pad for discharging the electrostatic energy to protect the active devices. - View Dependent Claims (8, 9, 10, 13, 29, 30)
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7. (canceled)
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11-12. -12. (canceled)
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14. A method of making a semiconductor device, comprising:
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providing a substrate having a plurality of active devices formed thereon; forming an interconnect site on the substrate; forming a contact structure on the interconnect site of the substrate; forming an electrostatic discharge (ESD) structure between the substrate and the chip carrier substrate, the ESD structure including an ESD bump electrode and ground plate; and providing a chip carrier substrate having an interconnect site connected to the contact structure, wherein the ESD bump electrode is separated from the ground plate by a distance D which is exposed to atmosphere and selected as a ratio of discharging threshold voltage for the active devices to discharging voltage of the atmosphere; wherein the ESD bump electrode, atmosphere, and ground plate respectively constitute a metal-insulator-metal capacitor having an electric field determined by the distance D which is less than electrostatic energy induced on the contact pad for discharging the electrostatic energy to protect the active devices. - View Dependent Claims (16, 17, 18, 31, 32)
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15. (canceled)
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19. (canceled)
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20. A semiconductor device, comprising:
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a substrate having a plurality of active devices formed thereon; a contact pad formed on the substrate; a solder bump formed on the contact pad of the substrate; an electrostatic discharge (ESD) bump electrode having a height H formed on the contact pad of the substrate; and a chip carrier substrate having a contact pad connected to the solder bump, the chip carrier substrate further including a ground plate, wherein the ESD bump electrode is separated from the ground plate by a distance D which is exposed to atmosphere and selected as a ratio of discharging threshold voltage for the active devices to discharging voltage of the atmosphere; wherein the ESD bump electrode, atmosphere, and ground plate respectively constitute a metal-insulator-metal capacitor having an electric field determined by the distance D which is less than electrostatic energy induced on the contact pad for discharging the electrostatic energy to protect the active devices. - View Dependent Claims (21, 22, 24, 25, 26)
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23. (canceled)
Specification