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Electrostatic Discharge (ESD) Protection Structure

  • US 20090117729A1
  • Filed: 11/02/2007
  • Published: 05/07/2009
  • Est. Priority Date: 11/02/2007
  • Status: Active Grant
First Claim
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1. A method of making a semiconductor device, comprising:

  • providing a substrate having a plurality of active devices formed thereon;

    forming a contact pad on the substrate;

    forming a solder bump on the contact pad of the substrate;

    forming an electrostatic discharge (ESD) bump electrode on the contact pad of the substrate having a height H ranging from 65 to 85 micrometers with a variation of +/−

    10 micrometers, the ESD bump electrode having a tip; and

    providing a chip carrier substrate having a contact pad metallurgically connected to the solder bump, the chip carrier substrate further including a ground plate, wherein the tip of the ESD bump electrode is separated from the ground plate by a distance D which is exposed to atmosphere and selected as a ratio of discharging threshold voltage for the active devices to discharging voltage of the atmosphere;

    wherein the ESD bump electrode, atmosphere, and ground plate respectively constitute a metal-insulator-metal capacitor having an electric field determined by the distance D which is less than electrostatic energy induced on the contact pad for discharging the electrostatic energy to protect the active devices.

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