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III-NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20090121214A1
  • Filed: 11/11/2008
  • Published: 05/14/2009
  • Est. Priority Date: 11/14/2007
  • Status: Abandoned Application
First Claim
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1. A III-nitride semiconductor light-emitting device, comprising:

  • a substrate;

    a first type semiconductor layer including a first surface and a second surface, wherein the first surface is disposed adjacent to the substrate, and the second surface has a plurality of recesses and is opposite to the first surface;

    a conformational active layer formed on the second surface and within the plurality of recesses; and

    a second type semiconductor layer formed on the conformational active layer.

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