LIGHT EMITTING DEVICES
3 Assignments
0 Petitions
Accused Products
Abstract
Light-emitting devices, and related components, systems and methods are disclosed.
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Citations
60 Claims
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1. (canceled)
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2. A light emitting diode comprising:
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a first semiconductor layer doped with a first dopant, coupled to a first electrode layer; an active layer overlying said first semiconductor layer, capable of emitting light; a second semiconductor layer doped with a second dopant, overlying said active layer, said first dopant and said second dopant being of opposite type; a second electrode layer on said second semiconductor layer; and a periodically-arranged plurality of holes formed in the second semiconductor layer and extending towards the first semiconductor layer, wherein the ratio of the period of said periodic arrangement and the wavelength of said emitted light in air is greater than about 0.1 and less than about 5; a depth of at least one of the plurality of holes is such that a thickness of said second semiconductor layer at a bottom of said at least one of the plurality of the holes is less than about one wavelength of said emitted light in said second semiconductor layer; a portion of the second electrode layer is disposed in a region of the second semiconductor layer in which a portion of the plurality of holes are formed; and when forward biased, light is emitted from at least a portion of the active layer disposed beneath a portion of the second electrode. - View Dependent Claims (3, 4, 5, 6, 8, 9, 10, 11, 17, 20, 23, 44, 45, 46)
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7. (canceled)
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12-13. -13. (canceled)
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15-16. -16. (canceled)
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18-19. -19. (canceled)
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21-22. -22. (canceled)
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24. A light emitting diode comprising:
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a first semiconductor layer doped with a first dopant, coupled to a first electrode layer; an active layer overlying said first semiconductor layer, capable of emitting light; a second semiconductor layer doped with a second dopant overlying said active layer, said first and second dopants being of opposite type;
a second electrode layer on said second semiconductor layer; and
a periodically-arranged plurality of holes formed in the second semiconductor layer and extending towards the first semiconductor layer, wherein;
the ratio of the period of said periodic arrangement and the wavelength of said emitted light in air is greater than about 0.1 and less than about 5;a depth of at least one of the plurality of holes is such that the thickness of said second semiconductor layer at a bottom of said at least one of the plurality of holes is less than about one wavelength of said emitted light in said second semiconductor layer; a portion of the second electrode layer is disposed in a region of the second semiconductor layer in which a portion of the plurality of holes are formed; when forward biased, light is emitted from at least a portion of the active layer disposed beneath a portion of the second electrode; and at least one of said first semiconductor layer, said active layer, and said second semiconductor layer composes a group III element and nitrogen. - View Dependent Claims (47, 48, 49)
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25-43. -43. (canceled)
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51-57. -57. (canceled)
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58. A light emitting diode comprising:
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a first semiconductor layer doped with a first dopant, coupled to a first electrode layer; an active layer overlying said first semiconductor layer, capable of emitting light; a second semiconductor layer doped with a second dopant, overlying said active layer, said first dopant and said second dopant being of opposite type; a second electrode layer on said second semiconductor layer; and a periodically-arranged plurality of holes formed in the second semiconductor layer and extending towards the first semiconductor layer, wherein the nearest neighbor distance between holes is approximately equal to the wavelength of emitted light; a depth of at least one of the plurality of holes is such that a thickness of said second semiconductor layer at a bottom of said at least one of the plurality of the holes is less than about one wavelength of said emitted light in said second semiconductor layer; a portion of the second electrode layer is disposed in a region of the second semiconductor layer in which a portion of the plurality of holes are formed; and when forward biased, light is emitted from at least a portion of the active layer disposed beneath a portion of the second electrode.
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59. A light emitting diode comprising:
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a first semiconductor layer doped with a first dopant, coupled to a first electrode layer; an active layer overlying said first semiconductor layer, capable of emitting light; a second semiconductor layer doped with a second dopant overlying said active layer, said first and second dopants being of opposite type; a second electrode layer on said second semiconductor layer; and a periodically-arranged plurality of holes formed in the second semiconductor layer and extending towards the first semiconductor layer, wherein; the nearest neighbor distance between holes is approximately equal to the wavelength of emitted light; a depth of at least one of the plurality of holes is such that the thickness of said second semiconductor layer at a bottom of said at least one of the plurality of holes is less than about one wavelength of said emitted light in said second semiconductor layer; a portion of the second electrode layer is disposed in a region of the second semiconductor layer in which a portion of the plurality of holes are formed; when forward biased, light is emitted from at least a portion of the active layer disposed beneath a portion of the second electrode; and at least one of said first semiconductor layer, said active layer, and said second semiconductor layer composes a group III element and nitrogen.
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60. A light emitting diode comprising:
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a first semiconductor layer doped with a first dopant, coupled to a first electrode layer; an active layer overlying said first semiconductor layer, capable of emitting light; a second semiconductor layer doped with a second dopant overlying said active layer, said first and second dopants being of opposite type; a second electrode layer on said second semiconductor layer; and a periodically-arranged plurality of holes formed in the second semiconductor layer and extending towards the first semiconductor layer, wherein; the nearest neighbor distance between holes is approximately equal to the wavelength of emitted light; a depth of at least one of the plurality of holes is such that the thickness of said second semiconductor layer at a bottom of said at least one of the plurality of holes is 40 nm; a portion of the second electrode layer is disposed in a region of the second semiconductor layer in which a portion of the plurality of holes are formed; when forward biased, light is emitted from at least a portion of the active layer disposed beneath a portion of the second electrode; and at least one of said first semiconductor layer, said active layer, and said second semiconductor layer composes a group III element and nitrogen.
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Specification