HIGH LIGHT EXTRACTION EFFICIENCY LIGHT EMITTING DIODE (LED) USING GLASS PACKAGING

• US 20090121250A1
• Filed: 11/20/2008
• Published: 05/14/2009
• Est. Priority Date: 11/15/2006
• Status: Abandoned Application

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: DenBaars, Steven P., Nakamura, Shuji, Masui, Hisashi
• Application Number:
  US12/275,136
• Publication Number:
  US 20090121250A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/16245 the item being metallic
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/483 Containers
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin

Abstract

An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED) combined with a shaped optical element in which the directional light from the ZnO cone or any high refractive index material in contact with the LED surface entering the shaped optical element is extracted to air.

Claims

1. A light emitting device, comprising:

a light emitting diode (LED) for emitting light at least a first emission wavelength, wherein the LED is encapsulated within a glass material.

2. The device of claim 1, wherein the emitted light contains blue or ultraviolet (UV) optical radiation.

3. The device of claim 1, wherein the LED is combined with one or more fluorescent materials.

4. The device of claim 3, wherein the LED and fluorescent materials emit white light.

5. The device of claim 1, wherein the glass material is optically transparent to the emitted light.

6. The device of claim 5, wherein the glass material has a refractive index of 1.4 or higher.

7. The device of claim 5, wherein the glass material is in physical contact with at least a part of the LED.

8. The device of claim 1, wherein the glass material has a shape that is designed to manage the emitted light.

9. The device of claim 1, wherein the glass material is shaped around the LED.

10. The device of claim 9, wherein the glass material is shaped via injection molding.

11. The device of claim 9, wherein the glass material is shaped via press shaping.

12. The device of claim 9, wherein the glass material is shaped above its softening temperature.

13. The device of claim 1, wherein the LED is located substantially at center of a package comprising both the LED and the glass material.

14. The device of claim 1, wherein the glass material is spherically shaped.

15. A method for fabricating a light emitting device, comprising:

encapsulating a light emitting diode (LED) within a glass material.

16. The method of claim 15, further comprising combining the LED with one or more fluorescent materials.

17. The method of claim 15, wherein the glass material is in physical contact with at least a part of the LED.

18. The method of claim 15, wherein the encapsulating step comprises shaping the glass material to manage the emitted light.

19. The method of claim 18, wherein the shaping step is performed via injection molding.

20. The method of claim 18, wherein the shaping step is performed via press shaping.

21. The method of claim 18, wherein the shaping step is performed above the glass material'"'"'s softening temperature.

22. A light emitting device, comprising:

a light emitting diode including a group-III nitride based emission source for emitting light; and

a glass encapsulation material, surrounding the group-III nitride based emission source, wherein the glass encapsulation material is substantially spherically shaped.