Photodiode Array

• US 20090121306A1
• Filed: 12/21/2005
• Published: 05/14/2009
• Est. Priority Date: 12/24/2004
• Status: Abandoned Application

• Current Assignee: Hamamatsu Photonics KK
• Original Assignee: Hamamatsu Photonics KK
• Inventors: Ishikawa, Yoshitaka
• Application Number:
  US11/793,651
• Publication Number:
  US 20090121306A1
• Time in Patent Office: Days
• US Class Current: 257/438
• CPC Class Codes: H01L 27/1446 in a repetitive configuration
• CPC Class Codes: H01L 27/1463 Pixel isolation structures
• CPC Class Codes: H01L 27/14663 Indirect radiation imagers, e.g. using luminescent members
• CPC Class Codes: H01L 31/107 the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Abstract

The present invention provides a photodiode array which can secure a sufficient aperture ratio with respect to light to be detected while restraining crosstalk between photodetecting channels even during operation in Geiger mode. In a photodiode array 1, resistors 42 and wirings 43 to be electrically connected to avalanche multipliers 6, respectively, are collectively formed on the upper surface side of a semiconductor substrate 2. Therefore, by setting the lower surface side of the semiconductor substrate 2 as a light-incident side, a sufficient aperture ratio can be secured while restraining crosstalk between photodetecting channels 10 by separators 5. Furthermore, on the lower surface side of the semiconductor substrate 2, accumulation layers 7 are formed, so that high quantum efficiency in each photodetecting channel 10 is secured and the effective aperture ratio is improved. The accumulation layers 7 lower the contact resistance between the semiconductor substrate 2 and the transparent electrode layer 3 and make it possible to form a satisfactory contact.

Claims

1. A photodiode array having a plurality of photodetecting channels which is formed in a semiconductor substrate and light to be detected is made to enter, wherein

on an incident surface side for the light to be detected of the semiconductor substrate,

accumulation layers having an impurity concentration higher than in the semiconductor substrate are formed,

on an opposite surface side of the incident surface of the semiconductor substrate,

multipliers for avalanche-multiplying carriers generated due to incidence of the light to be detected;

and

resistors which are electrically connected to the multipliers and are connected in parallel to each other, are formed for the respective photodetecting channels, and

the photodetecting channels are separated from each other by separators formed around the respective multipliers.

2. The photodiode array according to claim 1, wherein the separators are formed by trenches.

3. The photodiode array according to claim 2, wherein in the trenches, a low-refractive-index material having a refractive index lower than that of the semiconductor substrate is formed.

4. The photodiode array according to claim 3, wherein the low-refractive-index material is made of SiO₂.

5. The photodiode array according to claim 4, wherein the trench and the low-refractive-index material are formed so as to penetrate the semiconductor substrate from the incident surface side to the opposite surface side.

6. The photodiode array according to claim 1, wherein

the accumulation layers are formed for the respective photodetecting channels, and

the accumulation layers are electrically connected to each other by a transparent electrode layer formed on the incident surface side of the semiconductor substrate.