EMBOSSED ELECTROSTATIC CHUCK

• US 20090122458A1
• Filed: 11/12/2008
• Published: 05/14/2009
• Est. Priority Date: 11/14/2007
• Status: Abandoned Application

• Current Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Original Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Inventors: Lischer, D. Jeffrey, Blake, Julian G., Stone, Dale K., Stone, Lyudmila, Suuronen, David
• Application Number:
  US12/269,394
• Publication Number:
  US 20090122458A1
• Time in Patent Office: Days
• US Class Current: 361/234
• CPC Class Codes: H01L 21/6831 using electrostatic chucks

Abstract

An electrostatic chuck includes a layer having a plurality of protrusions to support a workpiece, wherein at least a portion of the layer has a first plurality of the plurality of protrusions. The first plurality of protrusions is spaced to geometrically form a pattern of hexagons. The first plurality of protrusions may be spaced an equal distance from adjacent protrusions and the equal distance may be about 4.0 millimeters from a center of one protrusion to a center of another protrusion. The present disclosure reduces peak mechanical stress levels conventionally present along an edge of each protrusion. Reducing such mechanical stress levels helps reduce backside damage to a supported workpiece, which in turn can reduce the generation of unwanted particles caused by such damage.

Claims

1. An electrostatic chuck comprising:

a layer having a plurality of protrusions to support a workpiece, wherein at least a portion of the layer has a first plurality of the plurality of protrusions, the first plurality of protrusions spaced to geometrically form a pattern of hexagons.

2. The electrostatic chuck of claim 1, wherein the first plurality of protrusions is further spaced to geometrically form a pattern of equilateral triangles wherein select groupings of six of the equilateral triangles have a common vertex to form one hexagon of the pattern of hexagons.

3. The electrostatic chuck of claim 2, wherein each one of the first plurality of protrusions is spaced an equal distance from adjacent ones of the first plurality of protrusions and the equal distance is about 4.0 millimeters from a center of one protrusion to a center of another protrusion.

4. The electrostatic chuck of claim 3, wherein the first plurality of protrusions have a circular planar contact area to contact a backside of the workpiece in a clamped position, and wherein a diameter of the circular contact area is greater than or equal to about 0.75 millimeters.

5. The electrostatic chuck of claim 3, wherein the first plurality of protrusions have a circular planar contact area to contact a backside of the workpiece in a clamped position, and wherein a diameter of the circular contact area is greater than or equal to about 1.0 millimeters.

6. The electrostatic chuck of claim 1, wherein the plurality of protrusions for an entirety of the layer are spaced to geometrically form the pattern of hexagons.

7. The electrostatic chuck of claim 6, wherein the plurality of protrusions are further spaced to geometrically form a pattern of equilateral triangles wherein select groupings of six of the equilateral triangles have a common vertex to form one hexagon of the pattern of hexagons.

8. The electrostatic chuck of claim 7, wherein each one of the plurality of protrusions is spaced an equal distance from adjacent ones of the plurality of protrusions and the equal distance is about 4.0 millimeters from a center of one protrusion to a center of another protrusion.

9. The electrostatic chuck of claim 8, wherein the plurality of protrusions have a circular contact area to contact a backside of the workpiece in a clamped position, and wherein a diameter of the circular contact area is greater than or equal to about 0.75 millimeters.

10. The electrostatic chuck of claim 6, wherein the plurality of protrusions have a rounded contact area to contact a backside of the workpiece in a clamped position.

11. The electrostatic chuck of claim 6, wherein the plurality of protrusions is fabricated of a material selected from the group consisting of silicon dioxide, silicon, and silicon nitride.

12. The electrostatic chuck of claim 6, wherein the plurality of protrusions are fabricated of a polyamide.

13. A processing apparatus comprising:

a process chamber; and

an electrostatic chuck positioned within the process chamber, the electrostatic chuck having a plurality of protrusions to support a workpiece for processing, wherein at least a portion of the layer has a first plurality of the plurality of protrusions, the first plurality of protrusions spaced to geometrically form a pattern of hexagons.

14. The processing apparatus of claim 13, further comprising an ion source to generate an ion beam to be directed towards the workpiece.

18. The processing apparatus of claim 13, further comprising a source to generate a plasma within the process chamber and wherein ions from the plasma are attracted to the workpiece in response to a bias signal provided to the workpiece via the electrostatic chuck.

15. The processing apparatus 13, wherein the first plurality of protrusions is further spaced to geometrically form a pattern of equilateral triangles wherein select groupings of six of the equilateral triangles have a common vertex to form one hexagon of the pattern of hexagons.

16. The processing apparatus 15, wherein each one of the first plurality of protrusions is spaced an equal distance from adjacent ones of the first plurality of protrusions and the equal distance is about 4.0 millimeters from a center of one protrusion to a center of another protrusion.

17. The processing apparatus 16, wherein the first plurality of protrusions have a circular contact area to contact a backside of the workpiece in a clamped position, and wherein a diameter of the circular planar contact area is greater than or equal to about 0.75 millimeters.